JPS56100441A - Semiconductor ic device with protection element and manufacture thereof - Google Patents

Semiconductor ic device with protection element and manufacture thereof

Info

Publication number
JPS56100441A
JPS56100441A JP262680A JP262680A JPS56100441A JP S56100441 A JPS56100441 A JP S56100441A JP 262680 A JP262680 A JP 262680A JP 262680 A JP262680 A JP 262680A JP S56100441 A JPS56100441 A JP S56100441A
Authority
JP
Japan
Prior art keywords
layer
protection element
prepared
film
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP262680A
Other languages
Japanese (ja)
Inventor
Masatoshi Seki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP262680A priority Critical patent/JPS56100441A/en
Publication of JPS56100441A publication Critical patent/JPS56100441A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Local Oxidation Of Silicon (AREA)

Abstract

PURPOSE:To obtain a highly-integrated IC with a protection element by providing the protection element in a P type Si substrate, by constituting the P-N junction thereof from the 1st region and the 2nd region deeper than the former, and by connecting an input terminal with the 2nd region through the intermediary of an N type poly-Si layer. CONSTITUTION:A field oxidized film 2 and a gate oxidized film 6 are provided on the P type Si substrate, an opening is made in the film 6, poly-Si 78 is piled, and in a part thereof SiO220 is formed. Next, the resistance of the layer 78 is lowered through P diffusion and N<+> layers 5 and 21 are prepared. The layer 78 and the film 20 are subjected to patterning and gate electrodes 7 and 22, a connection layer 8 of the input terminal with the layer 5, a drain drawing-out layer 23, a resistance layer 24 and a wiring 25 are prepared. Then, the surface of the poly-Si is oxidized thermally and covered with SiO226, while P ions are struck therein, and thereby N<+> layers 4, 3, 27 and 28 are prepared through self-alignment. Being covered with PSG29, Al layers 11 (input terminal), 14, 15 and 31 are prepared selectively. By this constitution, the highly-integrated IC with the protection element A, FETQM as a memory cell and a resistor 24 is formed.
JP262680A 1980-01-16 1980-01-16 Semiconductor ic device with protection element and manufacture thereof Pending JPS56100441A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP262680A JPS56100441A (en) 1980-01-16 1980-01-16 Semiconductor ic device with protection element and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP262680A JPS56100441A (en) 1980-01-16 1980-01-16 Semiconductor ic device with protection element and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS56100441A true JPS56100441A (en) 1981-08-12

Family

ID=11534598

Family Applications (1)

Application Number Title Priority Date Filing Date
JP262680A Pending JPS56100441A (en) 1980-01-16 1980-01-16 Semiconductor ic device with protection element and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS56100441A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6057659A (en) * 1983-09-09 1985-04-03 Hitachi Ltd Semiconductor integrated circuit device
JPS6144471A (en) * 1984-06-06 1986-03-04 テキサス　インスツルメンツ　インコーポレイテッド Electrostatic discharge protecting circuit of semiconductor device
JPS6173427A (en) * 1984-09-18 1986-04-15 Matsushita Electric Ind Co Ltd Amplifier circuit for fm intermediate frequency
JPS61283155A (en) * 1985-06-07 1986-12-13 Mitsubishi Electric Corp Input protecting circuit of semiconductor device
KR100325185B1 (en) * 1998-06-26 2002-02-21 가네꼬 히사시 Semiconductor integrated circuit

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6057659A (en) * 1983-09-09 1985-04-03 Hitachi Ltd Semiconductor integrated circuit device
JPH0478017B2 (en) * 1983-09-09 1992-12-10 Hitachi Ltd
JPS6144471A (en) * 1984-06-06 1986-03-04 テキサス　インスツルメンツ　インコーポレイテッド Electrostatic discharge protecting circuit of semiconductor device
JPH0558583B2 (en) * 1984-06-06 1993-08-26 Texas Instruments Inc
JPH07321318A (en) * 1984-06-06 1995-12-08 Texas Instr Inc <Ti> Protective device for semiconductor device
JPS6173427A (en) * 1984-09-18 1986-04-15 Matsushita Electric Ind Co Ltd Amplifier circuit for fm intermediate frequency
JPS61283155A (en) * 1985-06-07 1986-12-13 Mitsubishi Electric Corp Input protecting circuit of semiconductor device
KR100325185B1 (en) * 1998-06-26 2002-02-21 가네꼬 히사시 Semiconductor integrated circuit

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