JPS5449082A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5449082A
JPS5449082A JP11596277A JP11596277A JPS5449082A JP S5449082 A JPS5449082 A JP S5449082A JP 11596277 A JP11596277 A JP 11596277A JP 11596277 A JP11596277 A JP 11596277A JP S5449082 A JPS5449082 A JP S5449082A
Authority
JP
Japan
Prior art keywords
layers
type
layer
poly
parts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11596277A
Other languages
Japanese (ja)
Inventor
Yasuharu Nagayama
Kazuhiro Shimotori
Takao Nakano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11596277A priority Critical patent/JPS5449082A/en
Publication of JPS5449082A publication Critical patent/JPS5449082A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To manufacture an inverter logic element of an IG type which has no connection problem in case of high integration, by forming both active element part and passive element parts of polycrystal layers. CONSTITUTION:On the p--type Si substrate, p-type channel stopper 2 and SiO2 3 are formed, and on layer 3, p-type poly Si layer 15 is formed. Parts of layer 15 which become source 4, drain 5 and drain wiring part 10 are made into n-type layers through selective diffusion. On p-channel 16 between layers 4 anf 5, gate oxidized film 6 and gate concuctor 7 of poly Si are formed overlapping with layers 4 and 5. Further, n--type diffusion layers are selectively formed at the parts of drain load resistor 9, thereby obtaining a desired resistance value. Next, surface oxidized film 11 and electrodes 12 to 14 are porvided. In this constitution, since both the electrode layers and channel of an active element and the resistance and wiring 10 of a passive element are provided into single-layer poly Si, no defective connection between layers occurs and a highly-integrated and highly reliable device can be obtained.
JP11596277A 1977-09-26 1977-09-26 Semiconductor device Pending JPS5449082A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11596277A JPS5449082A (en) 1977-09-26 1977-09-26 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11596277A JPS5449082A (en) 1977-09-26 1977-09-26 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5449082A true JPS5449082A (en) 1979-04-18

Family

ID=14675434

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11596277A Pending JPS5449082A (en) 1977-09-26 1977-09-26 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5449082A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5529108A (en) * 1978-08-23 1980-03-01 Hitachi Ltd Semiconductor resistance element
JPS5897877A (en) * 1981-11-26 1983-06-10 シ−メンス・アクチエンゲゼルシヤフト Thin film mos phototransistor, method of producing same and driving method
WO1990005995A1 (en) * 1988-11-22 1990-05-31 Seiko Epson Corporation Semiconductor device
US5428242A (en) * 1988-11-22 1995-06-27 Seiko Epson Corporation Semiconductor devices with shielding for resistance elements
US6255695B1 (en) * 1996-09-20 2001-07-03 Semiconductor Energy Laboratory Co., Ltd. TFT CMOS logic circuit having source/drain electrodes of differing spacing from the gate electrode for decreasing wiring capacitance and power consumption

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5529108A (en) * 1978-08-23 1980-03-01 Hitachi Ltd Semiconductor resistance element
JPS5897877A (en) * 1981-11-26 1983-06-10 シ−メンス・アクチエンゲゼルシヤフト Thin film mos phototransistor, method of producing same and driving method
WO1990005995A1 (en) * 1988-11-22 1990-05-31 Seiko Epson Corporation Semiconductor device
GB2232530A (en) * 1988-11-22 1990-12-12 Seiko Epson Corp Semiconductor device
GB2232530B (en) * 1988-11-22 1993-09-22 Seiko Epson Corp A high precision semiconductor resistor device
US5428242A (en) * 1988-11-22 1995-06-27 Seiko Epson Corporation Semiconductor devices with shielding for resistance elements
US6255695B1 (en) * 1996-09-20 2001-07-03 Semiconductor Energy Laboratory Co., Ltd. TFT CMOS logic circuit having source/drain electrodes of differing spacing from the gate electrode for decreasing wiring capacitance and power consumption

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