JPS5694672A - Manufacture of silicon semiconductor element - Google Patents

Manufacture of silicon semiconductor element

Info

Publication number
JPS5694672A
JPS5694672A JP17304579A JP17304579A JPS5694672A JP S5694672 A JPS5694672 A JP S5694672A JP 17304579 A JP17304579 A JP 17304579A JP 17304579 A JP17304579 A JP 17304579A JP S5694672 A JPS5694672 A JP S5694672A
Authority
JP
Japan
Prior art keywords
film
region
polycrystalline
contacting
alloy layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17304579A
Other languages
Japanese (ja)
Inventor
Shoichi Komatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP17304579A priority Critical patent/JPS5694672A/en
Publication of JPS5694672A publication Critical patent/JPS5694672A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step

Abstract

PURPOSE:To enable forming of wiring into a complete dual layer by providing an Si-alloy layer which contacts ohmically with the connecting parts of polycrystalline Si of P and N types and by covering the whole surface with an SiO2 film when the polycrystalline Si of these types is applied to a diffusion layer and the like as a material for drawing out an electrode. CONSTITUTION:On a semiconductor substrate a source region 1 and a drain region 1' are formed diffusely and a field SiO2 film 2 is connected to the whole surface including the regions, while openings are made correspondingly to the regions 1 and 1'. Next, N type polycrystalline Si 3 contacting with the region 1 and P type polycrystalline Si 3' contacting with the region 1' are formed with extension on to the film 2 to be used for drawing an electrode. And, in the contacting part 7 is made a contact hole 6, wherein the Si-metal alloy layer 9 is embedded, and these are made to contact ohmically with each other. After that, the Si layers 3 and 3' and the alloy layer 9 are all covered with an SiO2 film 8 by the CVD method, whereby metal wiring on to the film 8 is made possible, and thus the integration of the device is improved.
JP17304579A 1979-12-27 1979-12-27 Manufacture of silicon semiconductor element Pending JPS5694672A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17304579A JPS5694672A (en) 1979-12-27 1979-12-27 Manufacture of silicon semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17304579A JPS5694672A (en) 1979-12-27 1979-12-27 Manufacture of silicon semiconductor element

Publications (1)

Publication Number Publication Date
JPS5694672A true JPS5694672A (en) 1981-07-31

Family

ID=15953177

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17304579A Pending JPS5694672A (en) 1979-12-27 1979-12-27 Manufacture of silicon semiconductor element

Country Status (1)

Country Link
JP (1) JPS5694672A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5304833A (en) * 1989-09-12 1994-04-19 Mitsubishi Electric Corporation Complementary MOS semiconductor device
US6512298B2 (en) * 2000-11-29 2003-01-28 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for producing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5304833A (en) * 1989-09-12 1994-04-19 Mitsubishi Electric Corporation Complementary MOS semiconductor device
US6512298B2 (en) * 2000-11-29 2003-01-28 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for producing the same

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