JPS5635436A - Semiconductor device - Google Patents

Abstract

PURPOSE:To obtain a high circuit density without producing any diode characteristic on the connecting path by performing the formation and connection of transistors of P and N channels on the same semiconductor substrate, through a high- melting point metal. CONSTITUTION:N type Si layers are stacked on a sapplire substrate 1 and subjected to selective etching and caused to remain as N type layers 31, 33 and 32 only in P, N, P-channel transistors 2, 4 and 3 forming regions. Then, a stepped source region consisting of P<+> type region 21a and 21b and a stepped P<+> type drain region consisting of regions 41a and 41b are diffused and formed in a layer 31 for P- channel transistor, and an N<+> type polycrystal gate electrode 61 embedded in an SiO2 film 51, is formed on the surfaces of these regions. An Al electrode 112 is fitted to the regions 21b, and the region 41b is connected to N and P channel transistors 4 and 3 similarly constructed as described above. Upon this occasion, the connection is performed by use of an N<+> polycrystal layer 62 through a metal electrode 10 such as Mo, W and Pt.