JPS5756961A - Complementary mos field effect semiconductor device - Google Patents
Complementary mos field effect semiconductor deviceInfo
- Publication number
- JPS5756961A JPS5756961A JP55131085A JP13108580A JPS5756961A JP S5756961 A JPS5756961 A JP S5756961A JP 55131085 A JP55131085 A JP 55131085A JP 13108580 A JP13108580 A JP 13108580A JP S5756961 A JPS5756961 A JP S5756961A
- Authority
- JP
- Japan
- Prior art keywords
- type
- region
- substrate
- oxidized film
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 230000000295 complement effect Effects 0.000 title 1
- 230000005669 field effect Effects 0.000 title 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- 229920005591 polysilicon Polymers 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 230000001133 acceleration Effects 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 238000005224 laser annealing Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To enable the increase in the mounting density and the acceleration in the operation of a semiconductor device by isolating the equal reversely conductive type floating regions to a substrate with an oxidized film and laser annealing the polysilicon layer on the respective regions, thereby forming an FET. CONSTITUTION:An N<+> type region 23 and a P<+> type region 22 are formed, for example, in an N type substrate isolated with selectively oxidized film 21, polysilicon layer 24 is accumulated on the overall surface, and is laser annealed to form single crystal. Subsequently, the region 22 on the layer 24 is formed in P type and the region 23 is formed in N type, gate oxidized film 34, 44 and gate polysilicon electrodes 35, 45 are formed, and N<+> type layers 32, 33, P<+> type layers 42, 43 to become source and drain regions are then diffused. Subsequently, aluminum wire layers 51- 53 are fored, and N-channel FETA and P-channel FETB are connected in series with each other. In this manner, a C-MOS device can be formed without providing a P- well, the circuit can be reduced in size and can be increased in mounting density, and the capacity between the drain and the substrate can be reduced, thereby accelerating the operation.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55131085A JPS5756961A (en) | 1980-09-20 | 1980-09-20 | Complementary mos field effect semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55131085A JPS5756961A (en) | 1980-09-20 | 1980-09-20 | Complementary mos field effect semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5756961A true JPS5756961A (en) | 1982-04-05 |
Family
ID=15049627
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55131085A Pending JPS5756961A (en) | 1980-09-20 | 1980-09-20 | Complementary mos field effect semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5756961A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4566025A (en) * | 1982-06-24 | 1986-01-21 | Rca Corporation | CMOS Structure incorporating vertical IGFETS |
US4755863A (en) * | 1983-04-21 | 1988-07-05 | Kabushiki Kaisha Toshiba | Semiconductor device having a semiconductor substrate with a high impurity concentration |
US5362981A (en) * | 1992-01-07 | 1994-11-08 | Fujitsu Limited | Integrated semiconductor device having a buried semiconductor layer and fabrication method thereof |
-
1980
- 1980-09-20 JP JP55131085A patent/JPS5756961A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4566025A (en) * | 1982-06-24 | 1986-01-21 | Rca Corporation | CMOS Structure incorporating vertical IGFETS |
US4755863A (en) * | 1983-04-21 | 1988-07-05 | Kabushiki Kaisha Toshiba | Semiconductor device having a semiconductor substrate with a high impurity concentration |
US5362981A (en) * | 1992-01-07 | 1994-11-08 | Fujitsu Limited | Integrated semiconductor device having a buried semiconductor layer and fabrication method thereof |
US5589410A (en) * | 1992-01-07 | 1996-12-31 | Fujitsu Limited | An integrated semiconductor device having a buried semiconductor layer and fabrication method thereof |
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