JPS6473673A - Mos transistor - Google Patents

Mos transistor

Info

Publication number
JPS6473673A
JPS6473673A JP23138287A JP23138287A JPS6473673A JP S6473673 A JPS6473673 A JP S6473673A JP 23138287 A JP23138287 A JP 23138287A JP 23138287 A JP23138287 A JP 23138287A JP S6473673 A JPS6473673 A JP S6473673A
Authority
JP
Japan
Prior art keywords
gate electrode
semiconductor substrate
inclined plane
drain region
source region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23138287A
Other languages
Japanese (ja)
Inventor
Toru Imamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Kyushu Ltd
Original Assignee
NEC Kyushu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Kyushu Ltd filed Critical NEC Kyushu Ltd
Priority to JP23138287A priority Critical patent/JPS6473673A/en
Publication of JPS6473673A publication Critical patent/JPS6473673A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To make a device fine without shortening a channel length by a method wherein a two-layer structure composed of a thin insulating film and a gate electrode is formed on the surface of a semiconductor substrate and the gate electrode and one part of a source-drain region are formed on a taper- etched inclined plane on the surface of the semiconductor substrate. CONSTITUTION:This transistor is constituted in the following manner: an inclined plane is formed by a taper-etching operation of the surface of a semiconductor substrate 1; a thick oxide film 2 is formed on this inclined plane; a device isolation operation is executed; after that, a thin oxide film 3 is deposited; a gate electrode 4 is formed; after that, a prescribed impurity, i.e. an impurity used to reverse the semiconductor substrate, is doped from a surface direction; a source region and a drain region 5, 6 are formed on both sides of the gate electrode 4. Accordingly, a channel during an operation of this MOS transistor is formed on the inclined plane; after the surface of the source region and the drain region 5, 6 has been oxidized thin, a thick protective insulating film 7 is deposited; in addition, contact openings are formed in the source region and the drain region 5, 6 and the gate electrode 4; a circuit is constituted by using a metal wiring part; as a result, an integrated circuit is formed.
JP23138287A 1987-09-14 1987-09-14 Mos transistor Pending JPS6473673A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23138287A JPS6473673A (en) 1987-09-14 1987-09-14 Mos transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23138287A JPS6473673A (en) 1987-09-14 1987-09-14 Mos transistor

Publications (1)

Publication Number Publication Date
JPS6473673A true JPS6473673A (en) 1989-03-17

Family

ID=16922739

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23138287A Pending JPS6473673A (en) 1987-09-14 1987-09-14 Mos transistor

Country Status (1)

Country Link
JP (1) JPS6473673A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8012819B2 (en) * 2005-11-17 2011-09-06 Samsung Electronics Co., Ltd. Semiconductor device including gate stack formed on inclined surface and method of fabricating the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8012819B2 (en) * 2005-11-17 2011-09-06 Samsung Electronics Co., Ltd. Semiconductor device including gate stack formed on inclined surface and method of fabricating the same

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