JPS5783064A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5783064A JPS5783064A JP13552581A JP13552581A JPS5783064A JP S5783064 A JPS5783064 A JP S5783064A JP 13552581 A JP13552581 A JP 13552581A JP 13552581 A JP13552581 A JP 13552581A JP S5783064 A JPS5783064 A JP S5783064A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- mask
- depression
- gate
- oxidated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 150000004767 nitrides Chemical class 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000010354 integration Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 230000003071 parasitic effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To realize a high speed, high integration MOSIC by a method wherein an oxidation resistant mask is placed on a substrate covered with a high concentration reverse conductivity type layer which is selectively oxidated to separate reverse conductivity type regions and the gate structure is built by removing channel region oxidated layer. CONSTITUTION:For example, an n type substrate 1 is overally diffused with a p<+> layer 2 and, for example, a nitride mask 3 is formed on FET source and drain regions and, if necessary, on a tunnel accommodated wiring region 7. Next, after forming an oxide layer 4 at a depth establishing some distance from the p<+> layer, and the part of the oxide layer 4 between source and drain regions 2a and 2b is selectively removed with help of a resist mask 9, for example, to form a depression 5. Next, a gate film 6 is formed on the depression 5 and, after providing contact holes in the nitride mask 3, an Al electrode for example is formed, completing an IC. By this, a high concentration structure can be formed on self-alignment manner and a high speed operation is ensured because gate parasitic capacitance can be reduced to the order of the p<+> layer 2 thickness and overlapping.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56135525A JPS5912028B2 (en) | 1981-08-31 | 1981-08-31 | Manufacturing method for semiconductor devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56135525A JPS5912028B2 (en) | 1981-08-31 | 1981-08-31 | Manufacturing method for semiconductor devices |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4251371A Division JPS575052B1 (en) | 1971-06-16 | 1971-06-16 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7611783A Division JPS58218172A (en) | 1983-05-02 | 1983-05-02 | Manufacture of insulated gate type semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5783064A true JPS5783064A (en) | 1982-05-24 |
| JPS5912028B2 JPS5912028B2 (en) | 1984-03-19 |
Family
ID=15153804
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56135525A Expired JPS5912028B2 (en) | 1981-08-31 | 1981-08-31 | Manufacturing method for semiconductor devices |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5912028B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5387528A (en) * | 1992-07-23 | 1995-02-07 | U.S. Philips Corporation | Method of manufacturing a semiconductor device comprising an insulated gate field effect device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6381221U (en) * | 1986-11-14 | 1988-05-28 |
-
1981
- 1981-08-31 JP JP56135525A patent/JPS5912028B2/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5387528A (en) * | 1992-07-23 | 1995-02-07 | U.S. Philips Corporation | Method of manufacturing a semiconductor device comprising an insulated gate field effect device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5912028B2 (en) | 1984-03-19 |
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