JPS54134579A - Mis semiconductor device - Google Patents
Mis semiconductor deviceInfo
- Publication number
- JPS54134579A JPS54134579A JP4292978A JP4292978A JPS54134579A JP S54134579 A JPS54134579 A JP S54134579A JP 4292978 A JP4292978 A JP 4292978A JP 4292978 A JP4292978 A JP 4292978A JP S54134579 A JPS54134579 A JP S54134579A
- Authority
- JP
- Japan
- Prior art keywords
- poly
- crystal silicon
- film
- polluted
- molybdenum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To prevent the gate insulating film from being polluted by alkaline ions, etc., by giving a two-layer structure of molybdenum and poly-crystal silicon to the gate electrode, etc.
CONSTITUTION: Oxide films 2 and 3 are formed on silicon substrate 1. Next, after boron ions injection, molybdenum film 4 and poly-crystal silicon film 5 are formed. Next, the gate electrode and wiring parts 4a and 5a are formed, and after that, arsenic is injected to form source,drain region 6. Next, after annealing, insulating film 7 is formed; and after opening the contanct part, internal wiring 8 is formed. The poly-crystal silicon layer is prevented from being polluted by alkaline ions, by the surface oxide film in the poly-crystal silicon layer.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4292978A JPS54134579A (en) | 1978-04-11 | 1978-04-11 | Mis semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4292978A JPS54134579A (en) | 1978-04-11 | 1978-04-11 | Mis semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54134579A true JPS54134579A (en) | 1979-10-19 |
Family
ID=12649702
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4292978A Pending JPS54134579A (en) | 1978-04-11 | 1978-04-11 | Mis semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54134579A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5671977A (en) * | 1979-11-19 | 1981-06-15 | Fujitsu Ltd | Preparation method of mis electric field effect semiconductor system |
JPS5673469A (en) * | 1979-11-20 | 1981-06-18 | Fujitsu Ltd | Manufacture of semiconductor device |
-
1978
- 1978-04-11 JP JP4292978A patent/JPS54134579A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5671977A (en) * | 1979-11-19 | 1981-06-15 | Fujitsu Ltd | Preparation method of mis electric field effect semiconductor system |
JPS5673469A (en) * | 1979-11-20 | 1981-06-18 | Fujitsu Ltd | Manufacture of semiconductor device |
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