JPS54134579A - Mis semiconductor device - Google Patents

Mis semiconductor device

Info

Publication number
JPS54134579A
JPS54134579A JP4292978A JP4292978A JPS54134579A JP S54134579 A JPS54134579 A JP S54134579A JP 4292978 A JP4292978 A JP 4292978A JP 4292978 A JP4292978 A JP 4292978A JP S54134579 A JPS54134579 A JP S54134579A
Authority
JP
Japan
Prior art keywords
poly
crystal silicon
film
polluted
molybdenum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4292978A
Other languages
Japanese (ja)
Inventor
Hidekazu Okabayashi
Tadatoshi Nozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4292978A priority Critical patent/JPS54134579A/en
Publication of JPS54134579A publication Critical patent/JPS54134579A/en
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To prevent the gate insulating film from being polluted by alkaline ions, etc., by giving a two-layer structure of molybdenum and poly-crystal silicon to the gate electrode, etc.
CONSTITUTION: Oxide films 2 and 3 are formed on silicon substrate 1. Next, after boron ions injection, molybdenum film 4 and poly-crystal silicon film 5 are formed. Next, the gate electrode and wiring parts 4a and 5a are formed, and after that, arsenic is injected to form source,drain region 6. Next, after annealing, insulating film 7 is formed; and after opening the contanct part, internal wiring 8 is formed. The poly-crystal silicon layer is prevented from being polluted by alkaline ions, by the surface oxide film in the poly-crystal silicon layer.
COPYRIGHT: (C)1979,JPO&Japio
JP4292978A 1978-04-11 1978-04-11 Mis semiconductor device Pending JPS54134579A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4292978A JPS54134579A (en) 1978-04-11 1978-04-11 Mis semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4292978A JPS54134579A (en) 1978-04-11 1978-04-11 Mis semiconductor device

Publications (1)

Publication Number Publication Date
JPS54134579A true JPS54134579A (en) 1979-10-19

Family

ID=12649702

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4292978A Pending JPS54134579A (en) 1978-04-11 1978-04-11 Mis semiconductor device

Country Status (1)

Country Link
JP (1) JPS54134579A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5671977A (en) * 1979-11-19 1981-06-15 Fujitsu Ltd Preparation method of mis electric field effect semiconductor system
JPS5673469A (en) * 1979-11-20 1981-06-18 Fujitsu Ltd Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5671977A (en) * 1979-11-19 1981-06-15 Fujitsu Ltd Preparation method of mis electric field effect semiconductor system
JPS5673469A (en) * 1979-11-20 1981-06-18 Fujitsu Ltd Manufacture of semiconductor device

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