JPS5671977A - Preparation method of mis electric field effect semiconductor system - Google Patents
Preparation method of mis electric field effect semiconductor systemInfo
- Publication number
- JPS5671977A JPS5671977A JP14981479A JP14981479A JPS5671977A JP S5671977 A JPS5671977 A JP S5671977A JP 14981479 A JP14981479 A JP 14981479A JP 14981479 A JP14981479 A JP 14981479A JP S5671977 A JPS5671977 A JP S5671977A
- Authority
- JP
- Japan
- Prior art keywords
- sio2
- film
- mask
- preparation
- electric field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005685 electric field effect Effects 0.000 title 1
- 238000002360 preparation method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 239000003344 environmental pollutant Substances 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 239000011521 glass Substances 0.000 abstract 2
- 231100000719 pollutant Toxicity 0.000 abstract 2
- 229910008062 Si-SiO2 Inorganic materials 0.000 abstract 1
- 229910006403 Si—SiO2 Inorganic materials 0.000 abstract 1
- 239000002648 laminated material Substances 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To easily obtain a system having no pollution of Na<+>, etc. by a method wherein a source, drain layer is formed by using a gate electrode of a laminated material of a glass film and a high melting point metal as a mask. CONSTITUTION:A field oxide film 2 and a gate oxide film 2G are formed on a P type Si 1 and thereupon, MO3 and CVD-SiO2 4 are laminated and then, a resist mask 5 is applied. A Mo gate electrode 3G is formed through an etching and then, the mask 5 is removed and an ion is injectd to form N<+> layers 6S, 6D. A pollutant on an SiO2 film 4 is removed by lightly performing an etching. Next thereto, a system is coated with a CVD-SiO2 7 after a heat processing in N2, and Al electrodes 8G, 8D, 8S are added. In this way, a glass film 4 is made to remain to trap a pollutant, as a result, the quantity of movable ion in the gate insulating film is sharply reduced, thus, eliminating uneasiness such as an increase of Si-SiO2 interface levels, and a fluctuation of a threshold value voltage due to a voltage applied.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14981479A JPS5671977A (en) | 1979-11-19 | 1979-11-19 | Preparation method of mis electric field effect semiconductor system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14981479A JPS5671977A (en) | 1979-11-19 | 1979-11-19 | Preparation method of mis electric field effect semiconductor system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5671977A true JPS5671977A (en) | 1981-06-15 |
Family
ID=15483284
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14981479A Pending JPS5671977A (en) | 1979-11-19 | 1979-11-19 | Preparation method of mis electric field effect semiconductor system |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5671977A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53139985A (en) * | 1977-05-13 | 1978-12-06 | Nippon Telegr & Teleph Corp <Ntt> | Production of mis type transistors |
| JPS54134579A (en) * | 1978-04-11 | 1979-10-19 | Nec Corp | Mis semiconductor device |
-
1979
- 1979-11-19 JP JP14981479A patent/JPS5671977A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53139985A (en) * | 1977-05-13 | 1978-12-06 | Nippon Telegr & Teleph Corp <Ntt> | Production of mis type transistors |
| JPS54134579A (en) * | 1978-04-11 | 1979-10-19 | Nec Corp | Mis semiconductor device |
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