JPS57155776A - Mos semiconductor device and manufacture thereof - Google Patents
Mos semiconductor device and manufacture thereofInfo
- Publication number
- JPS57155776A JPS57155776A JP4033981A JP4033981A JPS57155776A JP S57155776 A JPS57155776 A JP S57155776A JP 4033981 A JP4033981 A JP 4033981A JP 4033981 A JP4033981 A JP 4033981A JP S57155776 A JPS57155776 A JP S57155776A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- source
- region
- film
- over
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000012535 impurity Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 2
- 238000005468 ion implantation Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Abstract
PURPOSE:To obtain a high frequency and high output MOSFET with high gm and small input capacity, by impurity introduction into one side of a gate in self- matching manner. CONSTITUTION:Impurity is introduced into a P type high-resistant Si semiconductor substrate 1 to form an N<+> type source region 3 and drain region 4, and a gate electrode 7a constituted of MO film is formed after the formation of gate insulating films of SiO2 film, etc. Ion implantation is performed under the state of masking over the gate elctrode 7a to the dain region 4 with photoresist, etc. to form an N<+> layer 9, and further the mask is removed to perform ion implantation over the whole surface for the formation of a N3<-> layer 11. Next, a PSG film 12 is formed over the whole surface to form Al electrodes 13, 14 in ohmic contact with the source drain. Thus, high density impurity introduction is allowed into the surface of the substrate between the source and gate to reduce the overlap capacity of the source and gate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4033981A JPS57155776A (en) | 1981-03-23 | 1981-03-23 | Mos semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4033981A JPS57155776A (en) | 1981-03-23 | 1981-03-23 | Mos semiconductor device and manufacture thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57155776A true JPS57155776A (en) | 1982-09-25 |
| JPH0381300B2 JPH0381300B2 (en) | 1991-12-27 |
Family
ID=12577869
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4033981A Granted JPS57155776A (en) | 1981-03-23 | 1981-03-23 | Mos semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57155776A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54987A (en) * | 1977-06-06 | 1979-01-06 | Hitachi Ltd | Manufacture for semiconductor device |
-
1981
- 1981-03-23 JP JP4033981A patent/JPS57155776A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54987A (en) * | 1977-06-06 | 1979-01-06 | Hitachi Ltd | Manufacture for semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0381300B2 (en) | 1991-12-27 |
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