JPS57100760A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57100760A
JPS57100760A JP55177493A JP17749380A JPS57100760A JP S57100760 A JPS57100760 A JP S57100760A JP 55177493 A JP55177493 A JP 55177493A JP 17749380 A JP17749380 A JP 17749380A JP S57100760 A JPS57100760 A JP S57100760A
Authority
JP
Japan
Prior art keywords
electrodes
phosphorus
film
etched
oxidized
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55177493A
Other languages
Japanese (ja)
Other versions
JPS613107B2 (en
Inventor
Yoshihide Nagakubo
Hiroyuki Nihei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55177493A priority Critical patent/JPS57100760A/en
Publication of JPS57100760A publication Critical patent/JPS57100760A/en
Publication of JPS613107B2 publication Critical patent/JPS613107B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To enhance the performance and integration of a semiconductor device by forming ultrafine transfer gate or the like in a self-alignment without mask matching, thereby eliminating the difference of the threshold voltage between transistors. CONSTITUTION:A p type Si substrate 11 is selectively oxidized to form a field oxized film 12, and a phosphorus-doped polysilicon layer is ion etched with a capacitor electrode 13 and is further grown with an oxidized film 15 thereon. After a phosphorus-doped layer is grown thereon, the layer is etched, remaining partly the stepwise vicinities 17, 17' as transfer gate electrodes 181, 182. With the electrodes 13, 181, 182 as masks the film 15 is etched to form the second oxidized films 191, 192 under the electrodes 181, 182, and with the same electrodes 13, 181, 182 as masks phosphorus is thermally diffused to form n<+> type regions 201, 202, 211, 212, thereby manufacturing an MOS dynamic RAM.
JP55177493A 1980-12-16 1980-12-16 Manufacture of semiconductor device Granted JPS57100760A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55177493A JPS57100760A (en) 1980-12-16 1980-12-16 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55177493A JPS57100760A (en) 1980-12-16 1980-12-16 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57100760A true JPS57100760A (en) 1982-06-23
JPS613107B2 JPS613107B2 (en) 1986-01-30

Family

ID=16031859

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55177493A Granted JPS57100760A (en) 1980-12-16 1980-12-16 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57100760A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59155173A (en) * 1983-02-24 1984-09-04 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH026215A (en) * 1988-06-22 1990-01-10 Nippon Denso Co Ltd Combustion type heating device for vehicle
JPH0245217A (en) * 1988-08-05 1990-02-15 Nippon Denso Co Ltd Air conditioner
JPH0384213U (en) * 1989-12-18 1991-08-27

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59155173A (en) * 1983-02-24 1984-09-04 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor device
JPS6355872B2 (en) * 1983-02-24 1988-11-04 Nippon Telegraph & Telephone

Also Published As

Publication number Publication date
JPS613107B2 (en) 1986-01-30

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