JPS5690608A - Differential amplifier using mis transistor with v type channel - Google Patents

Differential amplifier using mis transistor with v type channel

Info

Publication number
JPS5690608A
JPS5690608A JP16737179A JP16737179A JPS5690608A JP S5690608 A JPS5690608 A JP S5690608A JP 16737179 A JP16737179 A JP 16737179A JP 16737179 A JP16737179 A JP 16737179A JP S5690608 A JPS5690608 A JP S5690608A
Authority
JP
Japan
Prior art keywords
source
drain
diffused
channel
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16737179A
Other languages
Japanese (ja)
Inventor
Masayuki Namiki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP16737179A priority Critical patent/JPS5690608A/en
Publication of JPS5690608A publication Critical patent/JPS5690608A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To reduce plane area by V-shaped etching.
CONSTITUTION: On the etched surface obtained by etching the surface of silicon 1 in a V shape, complementary MOSFET is formed. Namely, P channel FET part 3 consists of N+ source 5, N+ drain 6, channel part 7 diffused into the P type, oxidized insulating film 8, gate electrode 9, and contacts 10 and 11 of the source and drain. Further, n channel FET part 4, provided in P- well 2 on N- substrate 1, is composed of source and drain 12 and 13 diffused into the N+ type, channel part 14 diffused into the n type, oxidized film 15, Al gate 16, and source and drain contacts 17 and 18. The effective channel length is determined by the length of etched surfaces of high-concentration diffused layers 7 and 14.
COPYRIGHT: (C)1981,JPO&Japio
JP16737179A 1979-12-22 1979-12-22 Differential amplifier using mis transistor with v type channel Pending JPS5690608A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16737179A JPS5690608A (en) 1979-12-22 1979-12-22 Differential amplifier using mis transistor with v type channel

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16737179A JPS5690608A (en) 1979-12-22 1979-12-22 Differential amplifier using mis transistor with v type channel

Publications (1)

Publication Number Publication Date
JPS5690608A true JPS5690608A (en) 1981-07-22

Family

ID=15848465

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16737179A Pending JPS5690608A (en) 1979-12-22 1979-12-22 Differential amplifier using mis transistor with v type channel

Country Status (1)

Country Link
JP (1) JPS5690608A (en)

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