JPS55154769A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS55154769A JPS55154769A JP6299679A JP6299679A JPS55154769A JP S55154769 A JPS55154769 A JP S55154769A JP 6299679 A JP6299679 A JP 6299679A JP 6299679 A JP6299679 A JP 6299679A JP S55154769 A JPS55154769 A JP S55154769A
- Authority
- JP
- Japan
- Prior art keywords
- film
- region
- sio2
- type
- coated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 12
- 229910052681 coesite Inorganic materials 0.000 abstract 6
- 229910052906 cristobalite Inorganic materials 0.000 abstract 6
- 239000000377 silicon dioxide Substances 0.000 abstract 6
- 235000012239 silicon dioxide Nutrition 0.000 abstract 6
- 229910052682 stishovite Inorganic materials 0.000 abstract 6
- 229910052905 tridymite Inorganic materials 0.000 abstract 6
- 239000012535 impurity Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Abstract
PURPOSE:To enhance the integrating degree of an n-channel type Si gate MOS semiconductor device by employing a PSG film including impurity when forming a diffused region in a semiconductor substrate. CONSTITUTION:A thick field SiO2 film 22 is formed at the peripheral edge of a p- type Si substrate 21, a thin gate SiO2 film 23 is coated on the portion therebetween, a polycrystalline Si gate electrode 24 is formed thereon, with the electrode 24 as a mask ion is implanted thereto to form n-type source and drain regions 25a, 25b, and the film 23 is then removed thereon. Then, a PSG film 26 is coated on the entire surface, an SiO2 film 28a is formed at the center in the recess corresponding to the region 25a of the recess formed in accordance with the shape of the lower side, an SiO2 film 28b extended from the film 26 is formed in the recess corresponding to the region 25b, heat treated to extend an SiO2 film 30a continued to the film 22 at the side of the region 25a and SiO2 films 30b and 30c at both sides of the film 23. Simultaneously, impurity in the film 26 is diffused, and a deep n-type region 29a and 29b integral with one another are formed penetrating through the regions 25a and 25b.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6299679A JPS55154769A (en) | 1979-05-22 | 1979-05-22 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6299679A JPS55154769A (en) | 1979-05-22 | 1979-05-22 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55154769A true JPS55154769A (en) | 1980-12-02 |
| JPS6161268B2 JPS6161268B2 (en) | 1986-12-24 |
Family
ID=13216484
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6299679A Granted JPS55154769A (en) | 1979-05-22 | 1979-05-22 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55154769A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5935474A (en) * | 1982-08-23 | 1984-02-27 | Toshiba Corp | Manufacture of semiconductor device |
| JPS5935475A (en) * | 1982-08-23 | 1984-02-27 | Toshiba Corp | Manufacture of semiconductor device |
| US6022781A (en) * | 1994-12-28 | 2000-02-08 | International Business Machines Corporation | Method for fabricating a MOSFET with raised STI isolation self-aligned to the gate stack |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01179060U (en) * | 1988-06-10 | 1989-12-21 |
-
1979
- 1979-05-22 JP JP6299679A patent/JPS55154769A/en active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5935474A (en) * | 1982-08-23 | 1984-02-27 | Toshiba Corp | Manufacture of semiconductor device |
| JPS5935475A (en) * | 1982-08-23 | 1984-02-27 | Toshiba Corp | Manufacture of semiconductor device |
| US6022781A (en) * | 1994-12-28 | 2000-02-08 | International Business Machines Corporation | Method for fabricating a MOSFET with raised STI isolation self-aligned to the gate stack |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6161268B2 (en) | 1986-12-24 |
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