JPS57130471A - Manufacture of metal oxide semiconductor field-effect transistor - Google Patents
Manufacture of metal oxide semiconductor field-effect transistorInfo
- Publication number
- JPS57130471A JPS57130471A JP1646181A JP1646181A JPS57130471A JP S57130471 A JPS57130471 A JP S57130471A JP 1646181 A JP1646181 A JP 1646181A JP 1646181 A JP1646181 A JP 1646181A JP S57130471 A JPS57130471 A JP S57130471A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- mask
- conducted
- channel length
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910044991 metal oxide Inorganic materials 0.000 title 1
- 150000004706 metal oxides Chemical class 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 238000009792 diffusion process Methods 0.000 abstract 5
- 239000000463 material Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
Abstract
PURPOSE:To reduce the scattering of channel length, and to improve the yield of an element for high frequency by diffusing source and drain regions and reshaping a diffusion layer so as to extend to the channel region side while using a gate film on the channel region as a mask. CONSTITUTION:A gate oxide film 21 is shaped to a substrate such as a P<-> substrate 20, a mask material 22 is formed, the N type diffusion layers 23, 24 are molded to the source and drain regions, and punch-through voltage is measured. Consequently, a film such as the oxide film 21 is used as a mask material 22 and the side of the oxide film is etched for a fixed time when the channel length must be shortened. Ion implantation or diffusion treatment is conducted again while employing the oxide film 25 left as a mask, desired diffusion layers 26, 27 are shaped, and processes after the formation of electrodes are conducted. When the channel length may be adjusted minutely, heat treatment through which layers such as the diffusion layers 23, 24 are deepened is conducted at a predetermined temperature and for a fixed time after measuring. Accordingly, the characteristics of the element for high frequency having small feedback capacity are made uniform, and the element can be manufactured in high yield.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1646181A JPS57130471A (en) | 1981-02-06 | 1981-02-06 | Manufacture of metal oxide semiconductor field-effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1646181A JPS57130471A (en) | 1981-02-06 | 1981-02-06 | Manufacture of metal oxide semiconductor field-effect transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57130471A true JPS57130471A (en) | 1982-08-12 |
Family
ID=11916883
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1646181A Pending JPS57130471A (en) | 1981-02-06 | 1981-02-06 | Manufacture of metal oxide semiconductor field-effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57130471A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5385854A (en) * | 1993-07-15 | 1995-01-31 | Micron Semiconductor, Inc. | Method of forming a self-aligned low density drain inverted thin film transistor |
| JP2014236178A (en) * | 2013-06-05 | 2014-12-15 | 信越半導体株式会社 | Evaluation method of semiconductor substrate |
-
1981
- 1981-02-06 JP JP1646181A patent/JPS57130471A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5385854A (en) * | 1993-07-15 | 1995-01-31 | Micron Semiconductor, Inc. | Method of forming a self-aligned low density drain inverted thin film transistor |
| JP2014236178A (en) * | 2013-06-05 | 2014-12-15 | 信越半導体株式会社 | Evaluation method of semiconductor substrate |
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