JPS571259A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS571259A JPS571259A JP7511780A JP7511780A JPS571259A JP S571259 A JPS571259 A JP S571259A JP 7511780 A JP7511780 A JP 7511780A JP 7511780 A JP7511780 A JP 7511780A JP S571259 A JPS571259 A JP S571259A
- Authority
- JP
- Japan
- Prior art keywords
- diffusion
- reduced
- gate electrode
- oxidization
- oxidized
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 238000009792 diffusion process Methods 0.000 abstract 4
- 238000007254 oxidation reaction Methods 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000002513 implantation Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Abstract
PURPOSE:To obtain a short channel FET by selfalignment, by using a method by which a gate electrode is oxidized and reduced at the same time as the diffusion of a source and a drain, and equalizing the oxidizing speed and the diffusing speed. CONSTITUTION:After an active region in a Pt type Si substrate 11 is separated by SiO212, a doped poly Si electrode 14' is selectively formed. When wet oxidization treatment is performed at a high temperature after the implantation of As ions 15 and 16, the N type sources 17 and 18 are formed by diffusion, the poly Si14' is oxidized, the surface thereof is transformed into an SiO2 film, and the gate electrode 14'' whose gate length is reduced is formed. Then a hole is provided at SiO219, and metal wirings 20 and 21 are formed. In this constitution, if the expansion of the diffusion and the oxidization are performed to the same extent, the overlaps of the gate electrode, the source, and the drain can be reduced, the expansion of the diffusion and the thickness of the oxidization can be precisely controlled. Therefore, the short channel MOSFET having excellent characteristics can be obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7511780A JPS571259A (en) | 1980-06-03 | 1980-06-03 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7511780A JPS571259A (en) | 1980-06-03 | 1980-06-03 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS571259A true JPS571259A (en) | 1982-01-06 |
Family
ID=13566920
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7511780A Pending JPS571259A (en) | 1980-06-03 | 1980-06-03 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS571259A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9863175B2 (en) | 2006-07-10 | 2018-01-09 | Multimatic Inc. | Multiple piece construction automotive door hinge |
-
1980
- 1980-06-03 JP JP7511780A patent/JPS571259A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9863175B2 (en) | 2006-07-10 | 2018-01-09 | Multimatic Inc. | Multiple piece construction automotive door hinge |
| US10100563B2 (en) | 2006-07-10 | 2018-10-16 | Multimatic Inc. | Multiple piece construction automotive door hinge |
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