JPS5651873A - Mos transistor - Google Patents
Mos transistorInfo
- Publication number
- JPS5651873A JPS5651873A JP12854179A JP12854179A JPS5651873A JP S5651873 A JPS5651873 A JP S5651873A JP 12854179 A JP12854179 A JP 12854179A JP 12854179 A JP12854179 A JP 12854179A JP S5651873 A JPS5651873 A JP S5651873A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- film
- section
- electrodes
- subsided
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To facilitate threshold voltage control by forming a source region and a drain region on an Si substrate wherein a partially subsided section is formed on electrodes when gate electrodes are provided through a gate insulating film on the substrate exposed between the source region and the drain region. CONSTITUTION:The drain region 4 and the source region 5 are formed by diffusion on an Si substrate 6 and a concave gate SiO2 film 7 is provided from the upper end sections of these regions through the exposed surface of the substrate 6. Next, a drain electrode 2 and a source electrode 3 are provided respectively on the exposed surface on the regions 4 and 5. Gate electrodes 1 consisting of Al, Mo, poly- crystalline Si or the like are also formed on the film 7. In this case, a subsided section is provided on the central section of the electrodes 1 to expose a part of the film 7. In this way, the threshold voltage of a transistor will easily be adjusted by implanting ions in the substrate 6 through the film 7 in the subsided section and costs for manufacture will be reduced.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12854179A JPS5651873A (en) | 1979-10-05 | 1979-10-05 | Mos transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12854179A JPS5651873A (en) | 1979-10-05 | 1979-10-05 | Mos transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5651873A true JPS5651873A (en) | 1981-05-09 |
Family
ID=14987300
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12854179A Pending JPS5651873A (en) | 1979-10-05 | 1979-10-05 | Mos transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5651873A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02108576U (en) * | 1989-02-15 | 1990-08-29 | ||
JPH0641645A (en) * | 1992-07-23 | 1994-02-15 | Mitsubishi Electric Corp | Method for preventing cracking at weld zone of sheet for pressing and electric heating/annealing device of weld part |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5493980A (en) * | 1978-01-07 | 1979-07-25 | Agency Of Ind Science & Technol | Field-effect semicoductor device |
-
1979
- 1979-10-05 JP JP12854179A patent/JPS5651873A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5493980A (en) * | 1978-01-07 | 1979-07-25 | Agency Of Ind Science & Technol | Field-effect semicoductor device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02108576U (en) * | 1989-02-15 | 1990-08-29 | ||
JPH0641645A (en) * | 1992-07-23 | 1994-02-15 | Mitsubishi Electric Corp | Method for preventing cracking at weld zone of sheet for pressing and electric heating/annealing device of weld part |
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