JPS5651873A - Mos transistor - Google Patents

Mos transistor

Info

Publication number
JPS5651873A
JPS5651873A JP12854179A JP12854179A JPS5651873A JP S5651873 A JPS5651873 A JP S5651873A JP 12854179 A JP12854179 A JP 12854179A JP 12854179 A JP12854179 A JP 12854179A JP S5651873 A JPS5651873 A JP S5651873A
Authority
JP
Japan
Prior art keywords
substrate
film
section
electrodes
subsided
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12854179A
Other languages
Japanese (ja)
Inventor
Nobuo Shimoma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP12854179A priority Critical patent/JPS5651873A/en
Publication of JPS5651873A publication Critical patent/JPS5651873A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To facilitate threshold voltage control by forming a source region and a drain region on an Si substrate wherein a partially subsided section is formed on electrodes when gate electrodes are provided through a gate insulating film on the substrate exposed between the source region and the drain region. CONSTITUTION:The drain region 4 and the source region 5 are formed by diffusion on an Si substrate 6 and a concave gate SiO2 film 7 is provided from the upper end sections of these regions through the exposed surface of the substrate 6. Next, a drain electrode 2 and a source electrode 3 are provided respectively on the exposed surface on the regions 4 and 5. Gate electrodes 1 consisting of Al, Mo, poly- crystalline Si or the like are also formed on the film 7. In this case, a subsided section is provided on the central section of the electrodes 1 to expose a part of the film 7. In this way, the threshold voltage of a transistor will easily be adjusted by implanting ions in the substrate 6 through the film 7 in the subsided section and costs for manufacture will be reduced.
JP12854179A 1979-10-05 1979-10-05 Mos transistor Pending JPS5651873A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12854179A JPS5651873A (en) 1979-10-05 1979-10-05 Mos transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12854179A JPS5651873A (en) 1979-10-05 1979-10-05 Mos transistor

Publications (1)

Publication Number Publication Date
JPS5651873A true JPS5651873A (en) 1981-05-09

Family

ID=14987300

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12854179A Pending JPS5651873A (en) 1979-10-05 1979-10-05 Mos transistor

Country Status (1)

Country Link
JP (1) JPS5651873A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02108576U (en) * 1989-02-15 1990-08-29
JPH0641645A (en) * 1992-07-23 1994-02-15 Mitsubishi Electric Corp Method for preventing cracking at weld zone of sheet for pressing and electric heating/annealing device of weld part

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5493980A (en) * 1978-01-07 1979-07-25 Agency Of Ind Science & Technol Field-effect semicoductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5493980A (en) * 1978-01-07 1979-07-25 Agency Of Ind Science & Technol Field-effect semicoductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02108576U (en) * 1989-02-15 1990-08-29
JPH0641645A (en) * 1992-07-23 1994-02-15 Mitsubishi Electric Corp Method for preventing cracking at weld zone of sheet for pressing and electric heating/annealing device of weld part

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