JPS5685866A - Mos semiconductor device and manufacture thereof - Google Patents
Mos semiconductor device and manufacture thereofInfo
- Publication number
- JPS5685866A JPS5685866A JP16154579A JP16154579A JPS5685866A JP S5685866 A JPS5685866 A JP S5685866A JP 16154579 A JP16154579 A JP 16154579A JP 16154579 A JP16154579 A JP 16154579A JP S5685866 A JPS5685866 A JP S5685866A
- Authority
- JP
- Japan
- Prior art keywords
- film
- mask
- gate
- forming
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 abstract 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 1
- 229960000583 acetic acid Drugs 0.000 abstract 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000012362 glacial acetic acid Substances 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 229910017604 nitric acid Inorganic materials 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 230000000717 retained effect Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Abstract
PURPOSE:To obtain an MOS semiconductor device having preferable frequency characteristics by forming a gate electrode through a gate insulating film on the surface of a semiconductor substrate when forming the source and drain regions of an MISFET, forming a mask having a size larger than the electrode thereon and introducing impurity in a self-alignment. CONSTITUTION:A gate SiO2 film 2 and an Mo film 3 becoming later a gate electrode are laminated on a p type Si substrate 1, a polycrystalline Si film 6 is accumulated thereon, is treated with photoresist, and a mask having a predetermined size is formed thereon. Subsequently, with this mask the exposed film 3 is etched and removed using a solution containing phosphoric acid, nitric acid and glacial acetic acid, and the film 3 retained under the film 6 is sidewisely etched. Thereafter, with the extended film 6 as a mask n type impurity ions are implanted into the substrate 1 through the film 2, it is heat treated, n<+> type source and drain regions 4 and 5 are formed at both sides of the Mo gate film 3, and unnecessary film 6 is then removed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16154579A JPS5685866A (en) | 1979-12-14 | 1979-12-14 | Mos semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16154579A JPS5685866A (en) | 1979-12-14 | 1979-12-14 | Mos semiconductor device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5685866A true JPS5685866A (en) | 1981-07-13 |
Family
ID=15737134
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16154579A Pending JPS5685866A (en) | 1979-12-14 | 1979-12-14 | Mos semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5685866A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62105473A (en) * | 1985-10-31 | 1987-05-15 | Mitsubishi Electric Corp | Semiconductor device |
| US5115290A (en) * | 1989-09-06 | 1992-05-19 | Kabushiki Kaisha Toshiba | Mos type semiconductor device and method for manufacturing the same |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52103974A (en) * | 1976-02-26 | 1977-08-31 | Nec Corp | Semicondcutor integrated circuit device |
| JPS53112679A (en) * | 1977-03-14 | 1978-10-02 | Hitachi Ltd | Manufacture for mis type semiconductor device |
-
1979
- 1979-12-14 JP JP16154579A patent/JPS5685866A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52103974A (en) * | 1976-02-26 | 1977-08-31 | Nec Corp | Semicondcutor integrated circuit device |
| JPS53112679A (en) * | 1977-03-14 | 1978-10-02 | Hitachi Ltd | Manufacture for mis type semiconductor device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62105473A (en) * | 1985-10-31 | 1987-05-15 | Mitsubishi Electric Corp | Semiconductor device |
| US5115290A (en) * | 1989-09-06 | 1992-05-19 | Kabushiki Kaisha Toshiba | Mos type semiconductor device and method for manufacturing the same |
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