JPS52103974A - Semicondcutor integrated circuit device - Google Patents

Semicondcutor integrated circuit device

Info

Publication number
JPS52103974A
JPS52103974A JP2077476A JP2077476A JPS52103974A JP S52103974 A JPS52103974 A JP S52103974A JP 2077476 A JP2077476 A JP 2077476A JP 2077476 A JP2077476 A JP 2077476A JP S52103974 A JPS52103974 A JP S52103974A
Authority
JP
Japan
Prior art keywords
gate
semicondcutor
integrated circuit
circuit device
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2077476A
Other languages
Japanese (ja)
Other versions
JPS605066B2 (en
Inventor
Shigeru Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP51020774A priority Critical patent/JPS605066B2/en
Publication of JPS52103974A publication Critical patent/JPS52103974A/en
Publication of JPS605066B2 publication Critical patent/JPS605066B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To avoid the short-circuit accident between the gate and the drain caused by breakdown of the gate insulation film by installing the gate electrode away from the source and drain areas, and to improve action speed by reducing the capacity between the gate and the source or between the gate and the drain.
COPYRIGHT: (C)1977,JPO&Japio
JP51020774A 1976-02-26 1976-02-26 Semiconductor integrated circuit device Expired JPS605066B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51020774A JPS605066B2 (en) 1976-02-26 1976-02-26 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51020774A JPS605066B2 (en) 1976-02-26 1976-02-26 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS52103974A true JPS52103974A (en) 1977-08-31
JPS605066B2 JPS605066B2 (en) 1985-02-08

Family

ID=12036496

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51020774A Expired JPS605066B2 (en) 1976-02-26 1976-02-26 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS605066B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54129983A (en) * 1978-03-31 1979-10-08 Fujitsu Ltd Manufacture of semiconductor device
JPS5633880A (en) * 1979-08-29 1981-04-04 Hitachi Ltd Manufacture of mos semiconductor device
JPS5677987U (en) * 1979-11-20 1981-06-24
JPS5685866A (en) * 1979-12-14 1981-07-13 Hitachi Ltd Mos semiconductor device and manufacture thereof
JPS5797673A (en) * 1980-12-10 1982-06-17 Nec Corp Mos transistor

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54129983A (en) * 1978-03-31 1979-10-08 Fujitsu Ltd Manufacture of semiconductor device
JPS5633880A (en) * 1979-08-29 1981-04-04 Hitachi Ltd Manufacture of mos semiconductor device
JPS5677987U (en) * 1979-11-20 1981-06-24
JPS6127038Y2 (en) * 1979-11-20 1986-08-12
JPS5685866A (en) * 1979-12-14 1981-07-13 Hitachi Ltd Mos semiconductor device and manufacture thereof
JPS5797673A (en) * 1980-12-10 1982-06-17 Nec Corp Mos transistor

Also Published As

Publication number Publication date
JPS605066B2 (en) 1985-02-08

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