JPS52103974A - Semicondcutor integrated circuit device - Google Patents
Semicondcutor integrated circuit deviceInfo
- Publication number
- JPS52103974A JPS52103974A JP2077476A JP2077476A JPS52103974A JP S52103974 A JPS52103974 A JP S52103974A JP 2077476 A JP2077476 A JP 2077476A JP 2077476 A JP2077476 A JP 2077476A JP S52103974 A JPS52103974 A JP S52103974A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- semicondcutor
- integrated circuit
- circuit device
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE: To avoid the short-circuit accident between the gate and the drain caused by breakdown of the gate insulation film by installing the gate electrode away from the source and drain areas, and to improve action speed by reducing the capacity between the gate and the source or between the gate and the drain.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP51020774A JPS605066B2 (en) | 1976-02-26 | 1976-02-26 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP51020774A JPS605066B2 (en) | 1976-02-26 | 1976-02-26 | Semiconductor integrated circuit device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS52103974A true JPS52103974A (en) | 1977-08-31 |
JPS605066B2 JPS605066B2 (en) | 1985-02-08 |
Family
ID=12036496
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51020774A Expired JPS605066B2 (en) | 1976-02-26 | 1976-02-26 | Semiconductor integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS605066B2 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54129983A (en) * | 1978-03-31 | 1979-10-08 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS5633880A (en) * | 1979-08-29 | 1981-04-04 | Hitachi Ltd | Manufacture of mos semiconductor device |
JPS5677987U (en) * | 1979-11-20 | 1981-06-24 | ||
JPS5685866A (en) * | 1979-12-14 | 1981-07-13 | Hitachi Ltd | Mos semiconductor device and manufacture thereof |
JPS5797673A (en) * | 1980-12-10 | 1982-06-17 | Nec Corp | Mos transistor |
-
1976
- 1976-02-26 JP JP51020774A patent/JPS605066B2/en not_active Expired
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54129983A (en) * | 1978-03-31 | 1979-10-08 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS5633880A (en) * | 1979-08-29 | 1981-04-04 | Hitachi Ltd | Manufacture of mos semiconductor device |
JPS5677987U (en) * | 1979-11-20 | 1981-06-24 | ||
JPS6127038Y2 (en) * | 1979-11-20 | 1986-08-12 | ||
JPS5685866A (en) * | 1979-12-14 | 1981-07-13 | Hitachi Ltd | Mos semiconductor device and manufacture thereof |
JPS5797673A (en) * | 1980-12-10 | 1982-06-17 | Nec Corp | Mos transistor |
Also Published As
Publication number | Publication date |
---|---|
JPS605066B2 (en) | 1985-02-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5279679A (en) | Semiconductor memory device | |
JPS54881A (en) | Semiconductor device | |
JPS5366181A (en) | High dielectric strength mis type transistor | |
JPS5422781A (en) | Insulator gate protective semiconductor device | |
JPS52103974A (en) | Semicondcutor integrated circuit device | |
JPS5382179A (en) | Field effect transistor | |
JPS5346288A (en) | Mis type semiconductor device | |
JPS5366179A (en) | Semiconductor device | |
JPS52127078A (en) | Semiconductor device | |
JPS538080A (en) | Insulated gate type field effect transistor | |
JPS51147188A (en) | Semicoductor device | |
JPS5286086A (en) | Field effect transistor | |
JPS52141581A (en) | Mos type semiconductor device 7 its manufacture | |
JPS5223274A (en) | Self-matching type semiconductor device | |
JPS5270775A (en) | Integrated circuit containing mos-type semiconductor device | |
JPS53108381A (en) | Manufacture for semiconductor device | |
JPS5371573A (en) | Field effect transistor of isolating gate type | |
JPS535580A (en) | Field effect type semiconductor device | |
JPS53108760A (en) | Gate circuit of gate turn-off thyristor | |
JPS5373979A (en) | Transistor device | |
JPS5298460A (en) | Lead device for thyristor arcing circuit | |
JPS52127759A (en) | Resin-seal type semiconductor unit | |
JPS52147983A (en) | Insulation gate type semiconductor device | |
JPS53112680A (en) | Mis type semiconductor device | |
JPS51117581A (en) | Manufacturing method of mos type semiconductor equipment |