JPS53108381A - Manufacture for semiconductor device - Google Patents
Manufacture for semiconductor deviceInfo
- Publication number
- JPS53108381A JPS53108381A JP2267977A JP2267977A JPS53108381A JP S53108381 A JPS53108381 A JP S53108381A JP 2267977 A JP2267977 A JP 2267977A JP 2267977 A JP2267977 A JP 2267977A JP S53108381 A JPS53108381 A JP S53108381A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- semiconductor device
- eaves
- lowering
- leaving
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To prevent the short circuit between electrodes and lowering in breakdown voltage, by leaving the insulated coating film to the eaves.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2267977A JPS53108381A (en) | 1977-03-04 | 1977-03-04 | Manufacture for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2267977A JPS53108381A (en) | 1977-03-04 | 1977-03-04 | Manufacture for semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS53108381A true JPS53108381A (en) | 1978-09-21 |
Family
ID=12089538
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2267977A Pending JPS53108381A (en) | 1977-03-04 | 1977-03-04 | Manufacture for semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53108381A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5300444A (en) * | 1988-09-14 | 1994-04-05 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing a semiconductor device having a stacked structure formed of polycrystalline silicon film and silicon oxide film |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4849382A (en) * | 1971-10-22 | 1973-07-12 | ||
JPS49115681A (en) * | 1973-03-07 | 1974-11-05 | ||
JPS5012978A (en) * | 1973-05-23 | 1975-02-10 |
-
1977
- 1977-03-04 JP JP2267977A patent/JPS53108381A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4849382A (en) * | 1971-10-22 | 1973-07-12 | ||
JPS49115681A (en) * | 1973-03-07 | 1974-11-05 | ||
JPS5012978A (en) * | 1973-05-23 | 1975-02-10 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5300444A (en) * | 1988-09-14 | 1994-04-05 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing a semiconductor device having a stacked structure formed of polycrystalline silicon film and silicon oxide film |
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