JPS5324785A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5324785A JPS5324785A JP9868076A JP9868076A JPS5324785A JP S5324785 A JPS5324785 A JP S5324785A JP 9868076 A JP9868076 A JP 9868076A JP 9868076 A JP9868076 A JP 9868076A JP S5324785 A JPS5324785 A JP S5324785A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- fets
- insulator
- electrodes
- spacing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To improve the electric characteristics of FETs and prevent the mechanical damages of electrodes by filling the portions removed of the electrode regions for connection of external leads with an insulator without any spacing.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9868076A JPS5324785A (en) | 1976-08-20 | 1976-08-20 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9868076A JPS5324785A (en) | 1976-08-20 | 1976-08-20 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5324785A true JPS5324785A (en) | 1978-03-07 |
Family
ID=14226216
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9868076A Pending JPS5324785A (en) | 1976-08-20 | 1976-08-20 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5324785A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62216325A (en) * | 1986-03-18 | 1987-09-22 | Fujitsu Ltd | Manufacture of x-ray mask |
US5335256A (en) * | 1991-03-18 | 1994-08-02 | Canon Kabushiki Kaisha | Semiconductor substrate including a single or multi-layer film having different densities in the thickness direction |
-
1976
- 1976-08-20 JP JP9868076A patent/JPS5324785A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62216325A (en) * | 1986-03-18 | 1987-09-22 | Fujitsu Ltd | Manufacture of x-ray mask |
JPH0658874B2 (en) * | 1986-03-18 | 1994-08-03 | 富士通株式会社 | X-ray mask manufacturing method |
US5335256A (en) * | 1991-03-18 | 1994-08-02 | Canon Kabushiki Kaisha | Semiconductor substrate including a single or multi-layer film having different densities in the thickness direction |
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