JPS51151083A - High withstand voltage electric field effect semiconductor apparatus - Google Patents

High withstand voltage electric field effect semiconductor apparatus

Info

Publication number
JPS51151083A
JPS51151083A JP7613475A JP7613475A JPS51151083A JP S51151083 A JPS51151083 A JP S51151083A JP 7613475 A JP7613475 A JP 7613475A JP 7613475 A JP7613475 A JP 7613475A JP S51151083 A JPS51151083 A JP S51151083A
Authority
JP
Japan
Prior art keywords
electric field
field effect
withstand voltage
semiconductor apparatus
high withstand
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7613475A
Other languages
Japanese (ja)
Inventor
Hiroki Hattori
Tetsuo Biwa
Hiroshi Tamaoki
Katsunobu Awane
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP7613475A priority Critical patent/JPS51151083A/en
Priority to US05/691,874 priority patent/US4058822A/en
Publication of JPS51151083A publication Critical patent/JPS51151083A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To obtain the electric field effect semiconductor apparatus, having the stable high withstand voltage characteristic and the low ion voltage characteristic, by the simple manufacturing process.
COPYRIGHT: (C)1976,JPO&Japio
JP7613475A 1975-05-30 1975-06-20 High withstand voltage electric field effect semiconductor apparatus Pending JPS51151083A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP7613475A JPS51151083A (en) 1975-06-20 1975-06-20 High withstand voltage electric field effect semiconductor apparatus
US05/691,874 US4058822A (en) 1975-05-30 1976-06-01 High voltage, low on-resistance diffusion-self-alignment metal oxide semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7613475A JPS51151083A (en) 1975-06-20 1975-06-20 High withstand voltage electric field effect semiconductor apparatus

Publications (1)

Publication Number Publication Date
JPS51151083A true JPS51151083A (en) 1976-12-25

Family

ID=13596473

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7613475A Pending JPS51151083A (en) 1975-05-30 1975-06-20 High withstand voltage electric field effect semiconductor apparatus

Country Status (1)

Country Link
JP (1) JPS51151083A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49100979A (en) * 1973-01-31 1974-09-24
US3845495A (en) * 1971-09-23 1974-10-29 Signetics Corp High voltage, high frequency double diffused metal oxide semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3845495A (en) * 1971-09-23 1974-10-29 Signetics Corp High voltage, high frequency double diffused metal oxide semiconductor device
JPS49100979A (en) * 1973-01-31 1974-09-24

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