JPS51112187A - Processing method of semiconductor equipment - Google Patents

Processing method of semiconductor equipment

Info

Publication number
JPS51112187A
JPS51112187A JP50036588A JP3658875A JPS51112187A JP S51112187 A JPS51112187 A JP S51112187A JP 50036588 A JP50036588 A JP 50036588A JP 3658875 A JP3658875 A JP 3658875A JP S51112187 A JPS51112187 A JP S51112187A
Authority
JP
Japan
Prior art keywords
processing method
semiconductor equipment
small
impurity
eliminating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50036588A
Other languages
Japanese (ja)
Other versions
JPS5510145B2 (en
Inventor
Eisuke Ichinohe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP50036588A priority Critical patent/JPS51112187A/en
Priority to US05/667,445 priority patent/US4069067A/en
Publication of JPS51112187A publication Critical patent/JPS51112187A/en
Publication of JPS5510145B2 publication Critical patent/JPS5510145B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Non-Volatile Memory (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To make the size of the basic element which consists of the semiconductor integrated circuit as small as possible to realize high density circuit and to lead in the impurity, of which position shift is small, by eliminating the gap at the contact portion.
JP50036588A 1975-03-20 1975-03-28 Processing method of semiconductor equipment Granted JPS51112187A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP50036588A JPS51112187A (en) 1975-03-28 1975-03-28 Processing method of semiconductor equipment
US05/667,445 US4069067A (en) 1975-03-20 1976-03-16 Method of making a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50036588A JPS51112187A (en) 1975-03-28 1975-03-28 Processing method of semiconductor equipment

Publications (2)

Publication Number Publication Date
JPS51112187A true JPS51112187A (en) 1976-10-04
JPS5510145B2 JPS5510145B2 (en) 1980-03-14

Family

ID=12473924

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50036588A Granted JPS51112187A (en) 1975-03-20 1975-03-28 Processing method of semiconductor equipment

Country Status (1)

Country Link
JP (1) JPS51112187A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS534480A (en) * 1976-07-02 1978-01-17 Nippon Telegr & Teleph Corp <Ntt> Production of semiconductor device having mis transistors
JPS5396769A (en) * 1977-02-04 1978-08-24 Nippon Telegr & Teleph Corp <Ntt> Production of mis integratd circuit
JPS5478985A (en) * 1977-11-17 1979-06-23 Rca Corp Semiconductor and method of producing same
JPS54114479U (en) * 1978-01-31 1979-08-11
JPS54124687A (en) * 1978-03-20 1979-09-27 Nec Corp Production of semiconductor device
JPS54162480A (en) * 1978-06-06 1979-12-24 Rockwell International Corp Method of fabricating large scale integrated circuit
JPS55105345A (en) * 1979-02-07 1980-08-12 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS55166958A (en) * 1979-06-15 1980-12-26 Oki Electric Ind Co Ltd Manufacture of semiconductor device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS534480A (en) * 1976-07-02 1978-01-17 Nippon Telegr & Teleph Corp <Ntt> Production of semiconductor device having mis transistors
JPS6038876B2 (en) * 1976-07-02 1985-09-03 日本電信電話株式会社 Manufacturing method of semiconductor device having MIS transistor
JPS5396769A (en) * 1977-02-04 1978-08-24 Nippon Telegr & Teleph Corp <Ntt> Production of mis integratd circuit
JPS5478985A (en) * 1977-11-17 1979-06-23 Rca Corp Semiconductor and method of producing same
JPS54114479U (en) * 1978-01-31 1979-08-11
JPS54124687A (en) * 1978-03-20 1979-09-27 Nec Corp Production of semiconductor device
JPS54162480A (en) * 1978-06-06 1979-12-24 Rockwell International Corp Method of fabricating large scale integrated circuit
JPS55105345A (en) * 1979-02-07 1980-08-12 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS55166958A (en) * 1979-06-15 1980-12-26 Oki Electric Ind Co Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS5510145B2 (en) 1980-03-14

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