JPS5368066A - Semiconductor switch - Google Patents

Semiconductor switch

Info

Publication number
JPS5368066A
JPS5368066A JP14296576A JP14296576A JPS5368066A JP S5368066 A JPS5368066 A JP S5368066A JP 14296576 A JP14296576 A JP 14296576A JP 14296576 A JP14296576 A JP 14296576A JP S5368066 A JPS5368066 A JP S5368066A
Authority
JP
Japan
Prior art keywords
semiconductor switch
switch
circuti
suited
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14296576A
Other languages
Japanese (ja)
Inventor
Shinji Okuhara
Mitsuru Kawanami
Masaaki Kusano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14296576A priority Critical patent/JPS5368066A/en
Publication of JPS5368066A publication Critical patent/JPS5368066A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for dc voltages or currents

Landscapes

  • Power Conversion In General (AREA)

Abstract

PURPOSE:To realize a now semiconductor switch which features a high ignition sensitivity and highly stable action and which prevents the rate effect and is suited for the integrated formation, by constituting a circuti in such a way that a transient short circuit is given between the gate and cathode of the PNPN switch.
JP14296576A 1976-11-30 1976-11-30 Semiconductor switch Pending JPS5368066A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14296576A JPS5368066A (en) 1976-11-30 1976-11-30 Semiconductor switch

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14296576A JPS5368066A (en) 1976-11-30 1976-11-30 Semiconductor switch

Publications (1)

Publication Number Publication Date
JPS5368066A true JPS5368066A (en) 1978-06-17

Family

ID=15327768

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14296576A Pending JPS5368066A (en) 1976-11-30 1976-11-30 Semiconductor switch

Country Status (1)

Country Link
JP (1) JPS5368066A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6399616A (en) * 1986-03-24 1988-04-30 Matsushita Electric Works Ltd Solid-state relay and its manufacture
JPS63153916A (en) * 1986-08-11 1988-06-27 Matsushita Electric Works Ltd Semiconductor switching circuit
JP2013102445A (en) * 2012-12-10 2013-05-23 Toshiba Corp Gate drive circuit and power semiconductor module

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6399616A (en) * 1986-03-24 1988-04-30 Matsushita Electric Works Ltd Solid-state relay and its manufacture
JPH0478210B2 (en) * 1986-03-24 1992-12-10 Matsushita Electric Works Ltd
JPS63153916A (en) * 1986-08-11 1988-06-27 Matsushita Electric Works Ltd Semiconductor switching circuit
JP2013102445A (en) * 2012-12-10 2013-05-23 Toshiba Corp Gate drive circuit and power semiconductor module

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