JPS526036A - Semiconductor memory circuit - Google Patents
Semiconductor memory circuitInfo
- Publication number
- JPS526036A JPS526036A JP50081864A JP8186475A JPS526036A JP S526036 A JPS526036 A JP S526036A JP 50081864 A JP50081864 A JP 50081864A JP 8186475 A JP8186475 A JP 8186475A JP S526036 A JPS526036 A JP S526036A
- Authority
- JP
- Japan
- Prior art keywords
- memory circuit
- semiconductor memory
- memory
- utilizing
- constructed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Shift Register Type Memory (AREA)
Abstract
PURPOSE:By utilizing the memory characteristic of an avalanche transistor, the memory circuit suitable for an integration shall be constructed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50081864A JPS526036A (en) | 1975-07-04 | 1975-07-04 | Semiconductor memory circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50081864A JPS526036A (en) | 1975-07-04 | 1975-07-04 | Semiconductor memory circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS526036A true JPS526036A (en) | 1977-01-18 |
Family
ID=13758332
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50081864A Pending JPS526036A (en) | 1975-07-04 | 1975-07-04 | Semiconductor memory circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS526036A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63255025A (en) * | 1987-04-10 | 1988-10-21 | 松下電器産業株式会社 | Floor nozzle of electric cleaner |
US6232822B1 (en) * | 1988-01-08 | 2001-05-15 | Kabushiki Kaisha Toshiba | Semiconductor device including a bipolar transistor biased to produce a negative base current by the impact ionization mechanism |
-
1975
- 1975-07-04 JP JP50081864A patent/JPS526036A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63255025A (en) * | 1987-04-10 | 1988-10-21 | 松下電器産業株式会社 | Floor nozzle of electric cleaner |
JPH0377727B2 (en) * | 1987-04-10 | 1991-12-11 | Matsushita Electric Ind Co Ltd | |
US6232822B1 (en) * | 1988-01-08 | 2001-05-15 | Kabushiki Kaisha Toshiba | Semiconductor device including a bipolar transistor biased to produce a negative base current by the impact ionization mechanism |
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