JPS526036A - Semiconductor memory circuit - Google Patents

Semiconductor memory circuit

Info

Publication number
JPS526036A
JPS526036A JP50081864A JP8186475A JPS526036A JP S526036 A JPS526036 A JP S526036A JP 50081864 A JP50081864 A JP 50081864A JP 8186475 A JP8186475 A JP 8186475A JP S526036 A JPS526036 A JP S526036A
Authority
JP
Japan
Prior art keywords
memory circuit
semiconductor memory
memory
utilizing
constructed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50081864A
Other languages
Japanese (ja)
Inventor
Toshiro Tsukada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50081864A priority Critical patent/JPS526036A/en
Publication of JPS526036A publication Critical patent/JPS526036A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Shift Register Type Memory (AREA)

Abstract

PURPOSE:By utilizing the memory characteristic of an avalanche transistor, the memory circuit suitable for an integration shall be constructed.
JP50081864A 1975-07-04 1975-07-04 Semiconductor memory circuit Pending JPS526036A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50081864A JPS526036A (en) 1975-07-04 1975-07-04 Semiconductor memory circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50081864A JPS526036A (en) 1975-07-04 1975-07-04 Semiconductor memory circuit

Publications (1)

Publication Number Publication Date
JPS526036A true JPS526036A (en) 1977-01-18

Family

ID=13758332

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50081864A Pending JPS526036A (en) 1975-07-04 1975-07-04 Semiconductor memory circuit

Country Status (1)

Country Link
JP (1) JPS526036A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63255025A (en) * 1987-04-10 1988-10-21 松下電器産業株式会社 Floor nozzle of electric cleaner
US6232822B1 (en) * 1988-01-08 2001-05-15 Kabushiki Kaisha Toshiba Semiconductor device including a bipolar transistor biased to produce a negative base current by the impact ionization mechanism

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63255025A (en) * 1987-04-10 1988-10-21 松下電器産業株式会社 Floor nozzle of electric cleaner
JPH0377727B2 (en) * 1987-04-10 1991-12-11 Matsushita Electric Ind Co Ltd
US6232822B1 (en) * 1988-01-08 2001-05-15 Kabushiki Kaisha Toshiba Semiconductor device including a bipolar transistor biased to produce a negative base current by the impact ionization mechanism

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