JPS5211870A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5211870A
JPS5211870A JP50087395A JP8739575A JPS5211870A JP S5211870 A JPS5211870 A JP S5211870A JP 50087395 A JP50087395 A JP 50087395A JP 8739575 A JP8739575 A JP 8739575A JP S5211870 A JPS5211870 A JP S5211870A
Authority
JP
Japan
Prior art keywords
semiconductor device
cmos
occurrence
prevented
smaller
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50087395A
Other languages
Japanese (ja)
Other versions
JPS6031108B2 (en
Inventor
Kazuo Sato
Mitsuhiko Ueno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP50087395A priority Critical patent/JPS6031108B2/en
Priority to GB29283/76A priority patent/GB1559583A/en
Priority to DE2632448A priority patent/DE2632448B2/en
Priority to CH923576A priority patent/CH613071A5/xx
Priority to FR7621991A priority patent/FR2318500A1/en
Publication of JPS5211870A publication Critical patent/JPS5211870A/en
Priority to US05/890,029 priority patent/US4167747A/en
Priority to US06/041,764 priority patent/US4302875A/en
Priority to MY313/81A priority patent/MY8100313A/en
Publication of JPS6031108B2 publication Critical patent/JPS6031108B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention

Abstract

PURPOSE:By making the beta product of the parasitic transistor 9 formed in the CMOS smaller then 1, the occurrence of an abnormal current shall be prevented.
JP50087395A 1975-07-18 1975-07-18 Manufacturing method of semiconductor device Expired JPS6031108B2 (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP50087395A JPS6031108B2 (en) 1975-07-18 1975-07-18 Manufacturing method of semiconductor device
GB29283/76A GB1559583A (en) 1975-07-18 1976-07-14 Complementary mosfet device and method of manufacturing the same
DE2632448A DE2632448B2 (en) 1975-07-18 1976-07-19 CMOS device
CH923576A CH613071A5 (en) 1975-07-18 1976-07-19
FR7621991A FR2318500A1 (en) 1975-07-18 1976-07-19 COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR CIRCUIT AND ITS MANUFACTURING PROCESS
US05/890,029 US4167747A (en) 1975-07-18 1978-03-24 Complementary mosfet device and method of manufacturing the same
US06/041,764 US4302875A (en) 1975-07-18 1979-05-23 Complementary MOSFET device and method of manufacturing the same
MY313/81A MY8100313A (en) 1975-07-18 1981-12-30 A complementary mosfet device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50087395A JPS6031108B2 (en) 1975-07-18 1975-07-18 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5211870A true JPS5211870A (en) 1977-01-29
JPS6031108B2 JPS6031108B2 (en) 1985-07-20

Family

ID=13913681

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50087395A Expired JPS6031108B2 (en) 1975-07-18 1975-07-18 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6031108B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7545005B2 (en) 2003-03-27 2009-06-09 Mitsubishi Denki Kabushiki Kaisha Semiconductor device capable of avoiding latchup breakdown resulting from negative variation of floating offset voltage
JP2009231851A (en) * 2009-07-09 2009-10-08 Mitsubishi Electric Corp Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7545005B2 (en) 2003-03-27 2009-06-09 Mitsubishi Denki Kabushiki Kaisha Semiconductor device capable of avoiding latchup breakdown resulting from negative variation of floating offset voltage
US7777279B2 (en) 2003-03-27 2010-08-17 Mitsubishi Denki Kabushiki Kaisha Semiconductor device capable of avoiding latchup breakdown resulting from negative variation of floating offset voltage
JP2009231851A (en) * 2009-07-09 2009-10-08 Mitsubishi Electric Corp Semiconductor device

Also Published As

Publication number Publication date
JPS6031108B2 (en) 1985-07-20

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