JPS5211875A - Manufacturing method of a semiconductor device - Google Patents

Manufacturing method of a semiconductor device

Info

Publication number
JPS5211875A
JPS5211875A JP50088065A JP8806575A JPS5211875A JP S5211875 A JPS5211875 A JP S5211875A JP 50088065 A JP50088065 A JP 50088065A JP 8806575 A JP8806575 A JP 8806575A JP S5211875 A JPS5211875 A JP S5211875A
Authority
JP
Japan
Prior art keywords
manufacturing
semiconductor device
cmos
eliminated
effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50088065A
Other languages
Japanese (ja)
Other versions
JPS6048912B2 (en
Inventor
Kazuo Sato
Mitsuhiko Ueno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP50088065A priority Critical patent/JPS6048912B2/en
Priority to GB29283/76A priority patent/GB1559583A/en
Priority to FR7621991A priority patent/FR2318500A1/en
Priority to CH923576A priority patent/CH613071A5/xx
Priority to DE2632448A priority patent/DE2632448B2/en
Publication of JPS5211875A publication Critical patent/JPS5211875A/en
Priority to US05/890,029 priority patent/US4167747A/en
Priority to US06/041,764 priority patent/US4302875A/en
Priority to MY313/81A priority patent/MY8100313A/en
Publication of JPS6048912B2 publication Critical patent/JPS6048912B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:In the CMOS, the effect of a parasitic element shall be eliminated.
JP50088065A 1975-07-18 1975-07-18 Semiconductor device manufacturing method Expired JPS6048912B2 (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP50088065A JPS6048912B2 (en) 1975-07-18 1975-07-18 Semiconductor device manufacturing method
GB29283/76A GB1559583A (en) 1975-07-18 1976-07-14 Complementary mosfet device and method of manufacturing the same
FR7621991A FR2318500A1 (en) 1975-07-18 1976-07-19 COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR CIRCUIT AND ITS MANUFACTURING PROCESS
CH923576A CH613071A5 (en) 1975-07-18 1976-07-19
DE2632448A DE2632448B2 (en) 1975-07-18 1976-07-19 CMOS device
US05/890,029 US4167747A (en) 1975-07-18 1978-03-24 Complementary mosfet device and method of manufacturing the same
US06/041,764 US4302875A (en) 1975-07-18 1979-05-23 Complementary MOSFET device and method of manufacturing the same
MY313/81A MY8100313A (en) 1975-07-18 1981-12-30 A complementary mosfet device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50088065A JPS6048912B2 (en) 1975-07-18 1975-07-18 Semiconductor device manufacturing method

Publications (2)

Publication Number Publication Date
JPS5211875A true JPS5211875A (en) 1977-01-29
JPS6048912B2 JPS6048912B2 (en) 1985-10-30

Family

ID=13932439

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50088065A Expired JPS6048912B2 (en) 1975-07-18 1975-07-18 Semiconductor device manufacturing method

Country Status (1)

Country Link
JP (1) JPS6048912B2 (en)

Also Published As

Publication number Publication date
JPS6048912B2 (en) 1985-10-30

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