JPS5219978A - Manufacture process for a semiconductor device - Google Patents

Manufacture process for a semiconductor device

Info

Publication number
JPS5219978A
JPS5219978A JP50095658A JP9565875A JPS5219978A JP S5219978 A JPS5219978 A JP S5219978A JP 50095658 A JP50095658 A JP 50095658A JP 9565875 A JP9565875 A JP 9565875A JP S5219978 A JPS5219978 A JP S5219978A
Authority
JP
Japan
Prior art keywords
semiconductor device
manufacture process
type
mosfet
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50095658A
Other languages
Japanese (ja)
Inventor
Tsutomu Yoshihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP50095658A priority Critical patent/JPS5219978A/en
Publication of JPS5219978A publication Critical patent/JPS5219978A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/0883—Combination of depletion and enhancement field effect transistors

Abstract

PURPOSE:To make a MOSFET with the two made, enhancement type and depletion type, on a same Si substrate.
JP50095658A 1975-08-06 1975-08-06 Manufacture process for a semiconductor device Pending JPS5219978A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50095658A JPS5219978A (en) 1975-08-06 1975-08-06 Manufacture process for a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50095658A JPS5219978A (en) 1975-08-06 1975-08-06 Manufacture process for a semiconductor device

Publications (1)

Publication Number Publication Date
JPS5219978A true JPS5219978A (en) 1977-02-15

Family

ID=14143582

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50095658A Pending JPS5219978A (en) 1975-08-06 1975-08-06 Manufacture process for a semiconductor device

Country Status (1)

Country Link
JP (1) JPS5219978A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS515076A (en) * 1975-03-06 1976-01-16 Citizen Watch Co Ltd
JP2003309188A (en) * 2002-04-15 2003-10-31 Nec Corp Semiconductor device and its manufacturing method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS515076A (en) * 1975-03-06 1976-01-16 Citizen Watch Co Ltd
JPS533272B2 (en) * 1975-03-06 1978-02-04
JP2003309188A (en) * 2002-04-15 2003-10-31 Nec Corp Semiconductor device and its manufacturing method

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