JPS51132789A - Semiconductor apparatus with resistance element - Google Patents
Semiconductor apparatus with resistance elementInfo
- Publication number
- JPS51132789A JPS51132789A JP5609575A JP5609575A JPS51132789A JP S51132789 A JPS51132789 A JP S51132789A JP 5609575 A JP5609575 A JP 5609575A JP 5609575 A JP5609575 A JP 5609575A JP S51132789 A JPS51132789 A JP S51132789A
- Authority
- JP
- Japan
- Prior art keywords
- resistance element
- semiconductor apparatus
- semiconductor
- resistance value
- production process
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0802—Resistors only
Abstract
PURPOSE:To form the desired resistance value on a semiconductor IC, by simple production process.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5609575A JPS51132789A (en) | 1975-05-14 | 1975-05-14 | Semiconductor apparatus with resistance element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5609575A JPS51132789A (en) | 1975-05-14 | 1975-05-14 | Semiconductor apparatus with resistance element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS51132789A true JPS51132789A (en) | 1976-11-18 |
Family
ID=13017535
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5609575A Pending JPS51132789A (en) | 1975-05-14 | 1975-05-14 | Semiconductor apparatus with resistance element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS51132789A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61144065A (en) * | 1984-12-17 | 1986-07-01 | Toshiba Corp | Reverse conductive gate turn-off thyristor |
JPH098226A (en) * | 1995-06-15 | 1997-01-10 | Nec Corp | Semiconductor device and its manufacture |
-
1975
- 1975-05-14 JP JP5609575A patent/JPS51132789A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61144065A (en) * | 1984-12-17 | 1986-07-01 | Toshiba Corp | Reverse conductive gate turn-off thyristor |
JPH098226A (en) * | 1995-06-15 | 1997-01-10 | Nec Corp | Semiconductor device and its manufacture |
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