JPS5280784A - Insulated gate fype field-effect transistor - Google Patents

Insulated gate fype field-effect transistor

Info

Publication number
JPS5280784A
JPS5280784A JP15685575A JP15685575A JPS5280784A JP S5280784 A JPS5280784 A JP S5280784A JP 15685575 A JP15685575 A JP 15685575A JP 15685575 A JP15685575 A JP 15685575A JP S5280784 A JPS5280784 A JP S5280784A
Authority
JP
Japan
Prior art keywords
fype
field
effect transistor
insulated gate
igfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15685575A
Other languages
Japanese (ja)
Other versions
JPS5947476B2 (en
Inventor
Nobuo Sasaki
Kaoru Ikegami
Yasuo Kobayashi
Takashi Iwai
Motoo Nakano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP50156855A priority Critical patent/JPS5947476B2/en
Publication of JPS5280784A publication Critical patent/JPS5280784A/en
Publication of JPS5947476B2 publication Critical patent/JPS5947476B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78612—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)

Abstract

PURPOSE:To produce the SOS-IGFET which functions in a stable manner by forming a highly conductive region as desired inside the back gate on a sapphire substrate.
JP50156855A 1975-12-27 1975-12-27 Transistor Expired JPS5947476B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50156855A JPS5947476B2 (en) 1975-12-27 1975-12-27 Transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50156855A JPS5947476B2 (en) 1975-12-27 1975-12-27 Transistor

Publications (2)

Publication Number Publication Date
JPS5280784A true JPS5280784A (en) 1977-07-06
JPS5947476B2 JPS5947476B2 (en) 1984-11-19

Family

ID=15636841

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50156855A Expired JPS5947476B2 (en) 1975-12-27 1975-12-27 Transistor

Country Status (1)

Country Link
JP (1) JPS5947476B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5571068A (en) * 1978-11-22 1980-05-28 Nec Corp Mos transistor and its manufacturing method
JPS5571069A (en) * 1978-11-22 1980-05-28 Nec Corp Sos mos transistor and its manufacturing process

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51135373A (en) * 1975-05-20 1976-11-24 Agency Of Ind Science & Technol Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51135373A (en) * 1975-05-20 1976-11-24 Agency Of Ind Science & Technol Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5571068A (en) * 1978-11-22 1980-05-28 Nec Corp Mos transistor and its manufacturing method
JPS5571069A (en) * 1978-11-22 1980-05-28 Nec Corp Sos mos transistor and its manufacturing process

Also Published As

Publication number Publication date
JPS5947476B2 (en) 1984-11-19

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