JPS5263074A - Insulated gate type field effect transistor and its production - Google Patents
Insulated gate type field effect transistor and its productionInfo
- Publication number
- JPS5263074A JPS5263074A JP13633875A JP13633875A JPS5263074A JP S5263074 A JPS5263074 A JP S5263074A JP 13633875 A JP13633875 A JP 13633875A JP 13633875 A JP13633875 A JP 13633875A JP S5263074 A JPS5263074 A JP S5263074A
- Authority
- JP
- Japan
- Prior art keywords
- production
- field effect
- effect transistor
- type field
- insulated gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To produce an IG-FET of a short channel length and higher performance by isolating source and drain regions with a notched portion and providing an insulating film and gate electrode along the notched face.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13633875A JPS5263074A (en) | 1975-11-14 | 1975-11-14 | Insulated gate type field effect transistor and its production |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13633875A JPS5263074A (en) | 1975-11-14 | 1975-11-14 | Insulated gate type field effect transistor and its production |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5263074A true JPS5263074A (en) | 1977-05-25 |
JPS5734670B2 JPS5734670B2 (en) | 1982-07-24 |
Family
ID=15172866
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13633875A Granted JPS5263074A (en) | 1975-11-14 | 1975-11-14 | Insulated gate type field effect transistor and its production |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5263074A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5423385A (en) * | 1977-07-22 | 1979-02-21 | Matsushita Electric Ind Co Ltd | Gallium-arsenide semiconductor device |
JPS54145369U (en) * | 1978-03-31 | 1979-10-09 | ||
US4763177A (en) * | 1985-02-19 | 1988-08-09 | Texas Instruments Incorporated | Read only memory with improved channel length isolation and method of forming |
US6150693A (en) * | 1996-09-18 | 2000-11-21 | Advanced Micro Devices | Short channel non-self aligned VMOS field effect transistor |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4973982A (en) * | 1972-11-16 | 1974-07-17 | ||
JPS4975284A (en) * | 1972-11-22 | 1974-07-19 | ||
JPS49103577A (en) * | 1973-02-02 | 1974-10-01 | ||
JPS508483A (en) * | 1973-05-21 | 1975-01-28 |
-
1975
- 1975-11-14 JP JP13633875A patent/JPS5263074A/en active Granted
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4973982A (en) * | 1972-11-16 | 1974-07-17 | ||
JPS4975284A (en) * | 1972-11-22 | 1974-07-19 | ||
JPS49103577A (en) * | 1973-02-02 | 1974-10-01 | ||
JPS508483A (en) * | 1973-05-21 | 1975-01-28 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5423385A (en) * | 1977-07-22 | 1979-02-21 | Matsushita Electric Ind Co Ltd | Gallium-arsenide semiconductor device |
JPS54145369U (en) * | 1978-03-31 | 1979-10-09 | ||
JPS5721647Y2 (en) * | 1978-03-31 | 1982-05-11 | ||
US4763177A (en) * | 1985-02-19 | 1988-08-09 | Texas Instruments Incorporated | Read only memory with improved channel length isolation and method of forming |
US6150693A (en) * | 1996-09-18 | 2000-11-21 | Advanced Micro Devices | Short channel non-self aligned VMOS field effect transistor |
Also Published As
Publication number | Publication date |
---|---|
JPS5734670B2 (en) | 1982-07-24 |
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