JPS5263074A - Insulated gate type field effect transistor and its production - Google Patents

Insulated gate type field effect transistor and its production

Info

Publication number
JPS5263074A
JPS5263074A JP13633875A JP13633875A JPS5263074A JP S5263074 A JPS5263074 A JP S5263074A JP 13633875 A JP13633875 A JP 13633875A JP 13633875 A JP13633875 A JP 13633875A JP S5263074 A JPS5263074 A JP S5263074A
Authority
JP
Japan
Prior art keywords
production
field effect
effect transistor
type field
insulated gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13633875A
Other languages
Japanese (ja)
Other versions
JPS5734670B2 (en
Inventor
Yutaka Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP13633875A priority Critical patent/JPS5263074A/en
Publication of JPS5263074A publication Critical patent/JPS5263074A/en
Publication of JPS5734670B2 publication Critical patent/JPS5734670B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To produce an IG-FET of a short channel length and higher performance by isolating source and drain regions with a notched portion and providing an insulating film and gate electrode along the notched face.
COPYRIGHT: (C)1977,JPO&Japio
JP13633875A 1975-11-14 1975-11-14 Insulated gate type field effect transistor and its production Granted JPS5263074A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13633875A JPS5263074A (en) 1975-11-14 1975-11-14 Insulated gate type field effect transistor and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13633875A JPS5263074A (en) 1975-11-14 1975-11-14 Insulated gate type field effect transistor and its production

Publications (2)

Publication Number Publication Date
JPS5263074A true JPS5263074A (en) 1977-05-25
JPS5734670B2 JPS5734670B2 (en) 1982-07-24

Family

ID=15172866

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13633875A Granted JPS5263074A (en) 1975-11-14 1975-11-14 Insulated gate type field effect transistor and its production

Country Status (1)

Country Link
JP (1) JPS5263074A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5423385A (en) * 1977-07-22 1979-02-21 Matsushita Electric Ind Co Ltd Gallium-arsenide semiconductor device
JPS54145369U (en) * 1978-03-31 1979-10-09
US4763177A (en) * 1985-02-19 1988-08-09 Texas Instruments Incorporated Read only memory with improved channel length isolation and method of forming
US6150693A (en) * 1996-09-18 2000-11-21 Advanced Micro Devices Short channel non-self aligned VMOS field effect transistor

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4973982A (en) * 1972-11-16 1974-07-17
JPS4975284A (en) * 1972-11-22 1974-07-19
JPS49103577A (en) * 1973-02-02 1974-10-01
JPS508483A (en) * 1973-05-21 1975-01-28

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4973982A (en) * 1972-11-16 1974-07-17
JPS4975284A (en) * 1972-11-22 1974-07-19
JPS49103577A (en) * 1973-02-02 1974-10-01
JPS508483A (en) * 1973-05-21 1975-01-28

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5423385A (en) * 1977-07-22 1979-02-21 Matsushita Electric Ind Co Ltd Gallium-arsenide semiconductor device
JPS54145369U (en) * 1978-03-31 1979-10-09
JPS5721647Y2 (en) * 1978-03-31 1982-05-11
US4763177A (en) * 1985-02-19 1988-08-09 Texas Instruments Incorporated Read only memory with improved channel length isolation and method of forming
US6150693A (en) * 1996-09-18 2000-11-21 Advanced Micro Devices Short channel non-self aligned VMOS field effect transistor

Also Published As

Publication number Publication date
JPS5734670B2 (en) 1982-07-24

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