JPS5419678A - Insulated gate field effect transistor - Google Patents
Insulated gate field effect transistorInfo
- Publication number
- JPS5419678A JPS5419678A JP8477777A JP8477777A JPS5419678A JP S5419678 A JPS5419678 A JP S5419678A JP 8477777 A JP8477777 A JP 8477777A JP 8477777 A JP8477777 A JP 8477777A JP S5419678 A JPS5419678 A JP S5419678A
- Authority
- JP
- Japan
- Prior art keywords
- field effect
- effect transistor
- insulated gate
- gate field
- variations
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To reduce the variations in gate threshold values owing to the variations in channel lengths and obtain IGFETs making high speed operations at small channel channel lengths by so constituting the transistors that the conducting channels under gate electrodes are pinched off with depletion layers.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8477777A JPS5419678A (en) | 1977-07-15 | 1977-07-15 | Insulated gate field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8477777A JPS5419678A (en) | 1977-07-15 | 1977-07-15 | Insulated gate field effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5419678A true JPS5419678A (en) | 1979-02-14 |
Family
ID=13840102
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8477777A Pending JPS5419678A (en) | 1977-07-15 | 1977-07-15 | Insulated gate field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5419678A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5866362A (en) * | 1981-10-16 | 1983-04-20 | Toshiba Corp | Mos-type semicondutor device |
-
1977
- 1977-07-15 JP JP8477777A patent/JPS5419678A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5866362A (en) * | 1981-10-16 | 1983-04-20 | Toshiba Corp | Mos-type semicondutor device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5232277A (en) | Insulated gate type field-effect transistor | |
JPS5222480A (en) | Insulating gate field effect transistor | |
JPS51114074A (en) | Insulation gate type field effect transistor | |
JPS5365078A (en) | Production of junction type field effect transistor | |
JPS53133379A (en) | Junction-type field effect transistor | |
JPS5315081A (en) | Junction type field effect transistor and its production | |
JPS5384570A (en) | Field effect semiconductor device and its manufacture | |
JPS5419678A (en) | Insulated gate field effect transistor | |
JPS5263074A (en) | Insulated gate type field effect transistor and its production | |
JPS52128080A (en) | Junction-type field effect transistor | |
JPS5366382A (en) | Mos type field effect transistor | |
JPS53116079A (en) | Transistor and its manufacture | |
JPS51135375A (en) | Method of manufacturing junction type field effect transistor | |
JPS5245281A (en) | Field effect transistor of vertical junction type | |
JPS5242080A (en) | Micro channel type insulated gate field effect transistor and process for productin thereof | |
JPS526086A (en) | Production method of semiconductor device | |
JPS5212582A (en) | Insulated gate type semi-conductor device | |
JPS547881A (en) | Mos field effect transistor | |
JPS52123179A (en) | Mos type semiconductor device and its production | |
JPS53136486A (en) | Junction type field effect transistor and its manufacture | |
JPS52122086A (en) | Insulated gate type field effect rransistor | |
JPS5372579A (en) | Junction-type field effect transistor | |
JPS5221777A (en) | Junction type field effect semiconductor unit | |
JPS5378781A (en) | Mos type integrated circuit | |
JPS5425172A (en) | Longitudinal junction field effect transistor |