JPS5419678A - Insulated gate field effect transistor - Google Patents

Insulated gate field effect transistor

Info

Publication number
JPS5419678A
JPS5419678A JP8477777A JP8477777A JPS5419678A JP S5419678 A JPS5419678 A JP S5419678A JP 8477777 A JP8477777 A JP 8477777A JP 8477777 A JP8477777 A JP 8477777A JP S5419678 A JPS5419678 A JP S5419678A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
insulated gate
gate field
variations
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8477777A
Other languages
Japanese (ja)
Inventor
Takashi Ito
Masaichi Shinoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8477777A priority Critical patent/JPS5419678A/en
Publication of JPS5419678A publication Critical patent/JPS5419678A/en
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To reduce the variations in gate threshold values owing to the variations in channel lengths and obtain IGFETs making high speed operations at small channel channel lengths by so constituting the transistors that the conducting channels under gate electrodes are pinched off with depletion layers.
COPYRIGHT: (C)1979,JPO&Japio
JP8477777A 1977-07-15 1977-07-15 Insulated gate field effect transistor Pending JPS5419678A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8477777A JPS5419678A (en) 1977-07-15 1977-07-15 Insulated gate field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8477777A JPS5419678A (en) 1977-07-15 1977-07-15 Insulated gate field effect transistor

Publications (1)

Publication Number Publication Date
JPS5419678A true JPS5419678A (en) 1979-02-14

Family

ID=13840102

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8477777A Pending JPS5419678A (en) 1977-07-15 1977-07-15 Insulated gate field effect transistor

Country Status (1)

Country Link
JP (1) JPS5419678A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5866362A (en) * 1981-10-16 1983-04-20 Toshiba Corp Mos-type semicondutor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5866362A (en) * 1981-10-16 1983-04-20 Toshiba Corp Mos-type semicondutor device

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