JPS51114074A - Insulation gate type field effect transistor - Google Patents

Insulation gate type field effect transistor

Info

Publication number
JPS51114074A
JPS51114074A JP3887875A JP3887875A JPS51114074A JP S51114074 A JPS51114074 A JP S51114074A JP 3887875 A JP3887875 A JP 3887875A JP 3887875 A JP3887875 A JP 3887875A JP S51114074 A JPS51114074 A JP S51114074A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
type field
gate type
insulation gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3887875A
Other languages
Japanese (ja)
Other versions
JPS5653868B2 (en
Inventor
Akio Kashiwanuma
Takashi Shimada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP3887875A priority Critical patent/JPS51114074A/en
Publication of JPS51114074A publication Critical patent/JPS51114074A/en
Publication of JPS5653868B2 publication Critical patent/JPS5653868B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
    • H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:Use of MOSFET to avoid punch-throughs while, at the same time shortening channel length to improve high frequency characteristics.
JP3887875A 1975-03-31 1975-03-31 Insulation gate type field effect transistor Granted JPS51114074A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3887875A JPS51114074A (en) 1975-03-31 1975-03-31 Insulation gate type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3887875A JPS51114074A (en) 1975-03-31 1975-03-31 Insulation gate type field effect transistor

Publications (2)

Publication Number Publication Date
JPS51114074A true JPS51114074A (en) 1976-10-07
JPS5653868B2 JPS5653868B2 (en) 1981-12-22

Family

ID=12537467

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3887875A Granted JPS51114074A (en) 1975-03-31 1975-03-31 Insulation gate type field effect transistor

Country Status (1)

Country Link
JP (1) JPS51114074A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54147786A (en) * 1978-05-11 1979-11-19 Seiko Epson Corp Transistor
JPS5510510U (en) * 1978-07-04 1980-01-23
JPS55111178A (en) * 1979-02-20 1980-08-27 Mitsubishi Electric Corp Field-effect semiconductor device
JPS55130171A (en) * 1979-03-29 1980-10-08 Fujitsu Ltd Mos field effect transistor
JPS568879A (en) * 1979-07-03 1981-01-29 Nec Corp Insulating gate field effect transistor
JPS5892212A (en) * 1981-11-27 1983-06-01 Fujitsu Ltd Semiconductor device and manufacture therefor
JPS59151464A (en) * 1983-02-17 1984-08-29 Nec Corp Metal insulator semiconductor transistor and manufacture thereof
JPS60120572A (en) * 1983-12-05 1985-06-28 Seiko Instr & Electronics Ltd Manufacture of semiconductor device
JPS62299079A (en) * 1986-06-18 1987-12-26 Nec Corp Mis field-effect transistor
JPH01128569A (en) * 1987-11-13 1989-05-22 Nec Corp Field effect transistor
JPH03293767A (en) * 1990-10-19 1991-12-25 Semiconductor Res Found Semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62289060A (en) * 1986-06-09 1987-12-15 Matsushita Electric Ind Co Ltd Control circuit for picture quality in television receiver

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4857587A (en) * 1971-11-18 1973-08-13
JPS508484A (en) * 1973-05-21 1975-01-28
JPS5010086A (en) * 1973-05-23 1975-02-01
JPS5027483A (en) * 1973-07-10 1975-03-20
JPS5066181A (en) * 1973-10-12 1975-06-04

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4857587A (en) * 1971-11-18 1973-08-13
JPS508484A (en) * 1973-05-21 1975-01-28
JPS5010086A (en) * 1973-05-23 1975-02-01
JPS5027483A (en) * 1973-07-10 1975-03-20
JPS5066181A (en) * 1973-10-12 1975-06-04

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54147786A (en) * 1978-05-11 1979-11-19 Seiko Epson Corp Transistor
JPS5510510U (en) * 1978-07-04 1980-01-23
JPS55111178A (en) * 1979-02-20 1980-08-27 Mitsubishi Electric Corp Field-effect semiconductor device
JPH0465549B2 (en) * 1979-03-29 1992-10-20 Fujitsu Ltd
JPS55130171A (en) * 1979-03-29 1980-10-08 Fujitsu Ltd Mos field effect transistor
JPS568879A (en) * 1979-07-03 1981-01-29 Nec Corp Insulating gate field effect transistor
JPS5892212A (en) * 1981-11-27 1983-06-01 Fujitsu Ltd Semiconductor device and manufacture therefor
JPS59151464A (en) * 1983-02-17 1984-08-29 Nec Corp Metal insulator semiconductor transistor and manufacture thereof
JPH0582067B2 (en) * 1983-02-17 1993-11-17 Nippon Electric Co
JPS60120572A (en) * 1983-12-05 1985-06-28 Seiko Instr & Electronics Ltd Manufacture of semiconductor device
JPS62299079A (en) * 1986-06-18 1987-12-26 Nec Corp Mis field-effect transistor
JPH01128569A (en) * 1987-11-13 1989-05-22 Nec Corp Field effect transistor
JPH03293767A (en) * 1990-10-19 1991-12-25 Semiconductor Res Found Semiconductor device

Also Published As

Publication number Publication date
JPS5653868B2 (en) 1981-12-22

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