JPS53127273A - Mis transistor and its manufacture - Google Patents

Mis transistor and its manufacture

Info

Publication number
JPS53127273A
JPS53127273A JP4225877A JP4225877A JPS53127273A JP S53127273 A JPS53127273 A JP S53127273A JP 4225877 A JP4225877 A JP 4225877A JP 4225877 A JP4225877 A JP 4225877A JP S53127273 A JPS53127273 A JP S53127273A
Authority
JP
Japan
Prior art keywords
manufacture
mis transistor
source
drain
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4225877A
Other languages
Japanese (ja)
Other versions
JPS6146984B2 (en
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4225877A priority Critical patent/JPS53127273A/en
Publication of JPS53127273A publication Critical patent/JPS53127273A/en
Publication of JPS6146984B2 publication Critical patent/JPS6146984B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
    • H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To manufacture a FET of high dielectric strength and short channel, by forming a high concentration layer of the same conduction type as the base part at the edge part opposing the channel of source and drain layers deeper than the source and drain.
JP4225877A 1977-04-13 1977-04-13 Mis transistor and its manufacture Granted JPS53127273A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4225877A JPS53127273A (en) 1977-04-13 1977-04-13 Mis transistor and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4225877A JPS53127273A (en) 1977-04-13 1977-04-13 Mis transistor and its manufacture

Publications (2)

Publication Number Publication Date
JPS53127273A true JPS53127273A (en) 1978-11-07
JPS6146984B2 JPS6146984B2 (en) 1986-10-16

Family

ID=12630997

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4225877A Granted JPS53127273A (en) 1977-04-13 1977-04-13 Mis transistor and its manufacture

Country Status (1)

Country Link
JP (1) JPS53127273A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5710617U (en) * 1980-06-11 1982-01-20
US5060033A (en) * 1988-08-18 1991-10-22 Seiko Epson Corporation Semiconductor device and method of producing semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5710617U (en) * 1980-06-11 1982-01-20
US5060033A (en) * 1988-08-18 1991-10-22 Seiko Epson Corporation Semiconductor device and method of producing semiconductor device

Also Published As

Publication number Publication date
JPS6146984B2 (en) 1986-10-16

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