JPS53122384A - Manufacture for electrostatic induction transistor logic - Google Patents

Manufacture for electrostatic induction transistor logic

Info

Publication number
JPS53122384A
JPS53122384A JP3740677A JP3740677A JPS53122384A JP S53122384 A JPS53122384 A JP S53122384A JP 3740677 A JP3740677 A JP 3740677A JP 3740677 A JP3740677 A JP 3740677A JP S53122384 A JPS53122384 A JP S53122384A
Authority
JP
Japan
Prior art keywords
manufacture
transistor logic
electrostatic induction
induction transistor
domain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3740677A
Other languages
Japanese (ja)
Inventor
Norio Ono
Koichi Kijima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP3740677A priority Critical patent/JPS53122384A/en
Publication of JPS53122384A publication Critical patent/JPS53122384A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
    • H01L27/0225—Charge injection in static induction transistor logic structures [SITL]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To reduce the channel resistance and to increase the frequency performance, by making higher the impurity concentration of the gate domain in contact with the drain domain and deeper than the drain domain at the source side to the utmost, and by narrowing the distance of a plurality of gate domains.
JP3740677A 1977-03-31 1977-03-31 Manufacture for electrostatic induction transistor logic Pending JPS53122384A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3740677A JPS53122384A (en) 1977-03-31 1977-03-31 Manufacture for electrostatic induction transistor logic

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3740677A JPS53122384A (en) 1977-03-31 1977-03-31 Manufacture for electrostatic induction transistor logic

Publications (1)

Publication Number Publication Date
JPS53122384A true JPS53122384A (en) 1978-10-25

Family

ID=12496635

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3740677A Pending JPS53122384A (en) 1977-03-31 1977-03-31 Manufacture for electrostatic induction transistor logic

Country Status (1)

Country Link
JP (1) JPS53122384A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4569118A (en) * 1977-12-23 1986-02-11 General Electric Company Planar gate turn-off field controlled thyristors and planar junction gate field effect transistors, and method of making same
US4983536A (en) * 1989-11-24 1991-01-08 Gte Laboratories Incorporated Method of fabricating junction field effect transistor
US5126805A (en) * 1989-11-24 1992-06-30 Gte Laboratories Incorporated Junction field effect transistor with SiGe contact regions

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4569118A (en) * 1977-12-23 1986-02-11 General Electric Company Planar gate turn-off field controlled thyristors and planar junction gate field effect transistors, and method of making same
US4983536A (en) * 1989-11-24 1991-01-08 Gte Laboratories Incorporated Method of fabricating junction field effect transistor
US5126805A (en) * 1989-11-24 1992-06-30 Gte Laboratories Incorporated Junction field effect transistor with SiGe contact regions

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