JPS5748273A - P-n junction type field effect transistor - Google Patents

P-n junction type field effect transistor

Info

Publication number
JPS5748273A
JPS5748273A JP12322080A JP12322080A JPS5748273A JP S5748273 A JPS5748273 A JP S5748273A JP 12322080 A JP12322080 A JP 12322080A JP 12322080 A JP12322080 A JP 12322080A JP S5748273 A JPS5748273 A JP S5748273A
Authority
JP
Japan
Prior art keywords
region
gate
source
field effect
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12322080A
Other languages
Japanese (ja)
Inventor
Shuhei Tanaka
Yoichi Shimomichi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Denshi KK
Original Assignee
Hitachi Denshi KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Denshi KK filed Critical Hitachi Denshi KK
Priority to JP12322080A priority Critical patent/JPS5748273A/en
Publication of JPS5748273A publication Critical patent/JPS5748273A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To improve gate withstand voltage and to reduce input capacity of a P-N junction type field effect transistor by a method wherein grooves deeper than the gate region are provided between the gate and drain regions and between the gate and source regions. CONSTITUTION:The source region 1, the drain region 2 and the channel region 5 have the first conductive type. The first gate region 3 having the second conductive type is provided at the middle part between the source and drain regions 1, 2, and moreover the second gate region 4 is provided facing to the first gate region 3. Depth of the source region 1, the drain region 2, and the first gate region 3 are all 0.5mum. Thickness of the channel region 5 is 2.2mum. The grooves 6a, 6b of 1.6mum depth, 2mum width are provided respectively at the middle part between the first gate region 3 and the source region 1 and at the middle part between the first gate region 3 and the drain region 2.
JP12322080A 1980-09-05 1980-09-05 P-n junction type field effect transistor Pending JPS5748273A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12322080A JPS5748273A (en) 1980-09-05 1980-09-05 P-n junction type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12322080A JPS5748273A (en) 1980-09-05 1980-09-05 P-n junction type field effect transistor

Publications (1)

Publication Number Publication Date
JPS5748273A true JPS5748273A (en) 1982-03-19

Family

ID=14855167

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12322080A Pending JPS5748273A (en) 1980-09-05 1980-09-05 P-n junction type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5748273A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55116467A (en) * 1979-03-02 1980-09-08 Nissan Motor Co Ltd Decorating coating object with tape
JPS5973078A (en) * 1982-10-16 1984-04-25 Kuramoto Sangyo:Kk Coating method conjointly using ornamental pasting sheet
JPH01187978A (en) * 1988-01-22 1989-07-27 Mitsubishi Electric Corp Field-effect transistor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55116467A (en) * 1979-03-02 1980-09-08 Nissan Motor Co Ltd Decorating coating object with tape
JPS5748273B2 (en) * 1979-03-02 1982-10-15
JPS5973078A (en) * 1982-10-16 1984-04-25 Kuramoto Sangyo:Kk Coating method conjointly using ornamental pasting sheet
JPH0218144B2 (en) * 1982-10-16 1990-04-24 Kuramoto Sangyo Kk
JPH01187978A (en) * 1988-01-22 1989-07-27 Mitsubishi Electric Corp Field-effect transistor

Similar Documents

Publication Publication Date Title
GB1375355A (en)
ES8800512A1 (en) Trench transistor.
JPS5748273A (en) P-n junction type field effect transistor
GB1471282A (en) Field effect semiconductor devices
JPS55121682A (en) Field effect transistor
TW328609B (en) Field effect transistor with reduced delay variation
JPS56116669A (en) Field effect transistor
JPS57121280A (en) Field effect transistor
JPS56126970A (en) Mos field effect transistor and manufacture thereof
JPS53122384A (en) Manufacture for electrostatic induction transistor logic
JPS54986A (en) Reducing method of voltage dependancy for fet output capacity
JPS5772386A (en) Junction type field-effect semiconductor device
JPS57120371A (en) Manufacture of complementary type mos semiconductor
JPS5615079A (en) Insulated gate field effect transistor couple
JPS57199268A (en) Junction type field effect transistor
JPS534479A (en) Production of junction type field effect transistor
JPS5662372A (en) Junction type field effect semiconductor device
JPS5724564A (en) Insulated gate field effect transistor
JPS5435684A (en) Junction type field effect transistor
JPS5541766A (en) Junction-type field effect transistor
JPS5425172A (en) Longitudinal junction field effect transistor
JPS5752173A (en) Junction type field effect transistor
JPS5396772A (en) Junction type field effect transistor
JPS5694774A (en) Field-effect transistor
JPS57106081A (en) Normally-off type schottky junction field effect transistor