JPS5541766A - Junction-type field effect transistor - Google Patents

Junction-type field effect transistor

Info

Publication number
JPS5541766A
JPS5541766A JP11534978A JP11534978A JPS5541766A JP S5541766 A JPS5541766 A JP S5541766A JP 11534978 A JP11534978 A JP 11534978A JP 11534978 A JP11534978 A JP 11534978A JP S5541766 A JPS5541766 A JP S5541766A
Authority
JP
Japan
Prior art keywords
regions
substrate
increased
region
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11534978A
Other languages
Japanese (ja)
Other versions
JPS6217389B2 (en
Inventor
Shuji Kanamori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11534978A priority Critical patent/JPS5541766A/en
Publication of JPS5541766A publication Critical patent/JPS5541766A/en
Publication of JPS6217389B2 publication Critical patent/JPS6217389B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To increase relative conductance without decreasing counter withstanding voltages, threshold voltages, and the like by forming the gate regions of J-FETs having many channels in a hollow hexagonal-column shape, and by using a same chip size.
CONSTITUTION: An N-type layer 2 is epitaxially grown on a P-type Si substrate 1, and a P+ gate region 3 reaching the substrate 1 is diffused on both ends of the layer 2. Then, a plurality of P+ regions 4 which do not reach the substrate 1 are provided in the layer 2 which is surrounded by the region 3, and all the surface is covered by an oxidized film 7. Openings are made on both sides of the regions 4, and N+ source regions 5 and drain regions 6 are diffused. In this constitution, the shape of the P+ gate region 4 is formed as a hollow hexagonal column. Said source regions 5 and drain regions 6 are located in the hollow portions constituted by the regions 4. In this method, the area of the channel region is increased 2.5 times that of the ordinary case, and the effective gate width is also increased 2.5 times, thereby relative conductance is increased.
COPYRIGHT: (C)1980,JPO&Japio
JP11534978A 1978-09-19 1978-09-19 Junction-type field effect transistor Granted JPS5541766A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11534978A JPS5541766A (en) 1978-09-19 1978-09-19 Junction-type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11534978A JPS5541766A (en) 1978-09-19 1978-09-19 Junction-type field effect transistor

Publications (2)

Publication Number Publication Date
JPS5541766A true JPS5541766A (en) 1980-03-24
JPS6217389B2 JPS6217389B2 (en) 1987-04-17

Family

ID=14660315

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11534978A Granted JPS5541766A (en) 1978-09-19 1978-09-19 Junction-type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5541766A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4547906A (en) * 1983-06-27 1985-10-22 Kanebo, Ltd. Heat retaining article
DE3605677A1 (en) 1985-02-22 1986-08-28 Kanebo Textile, Ltd., Osaka WARM-HOLDING CLOTHING
JP2015002267A (en) * 2013-06-14 2015-01-05 日亜化学工業株式会社 Field effect transistor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4890683A (en) * 1972-03-04 1973-11-26
JPS5041575A (en) * 1973-02-27 1975-04-16

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4890683A (en) * 1972-03-04 1973-11-26
JPS5041575A (en) * 1973-02-27 1975-04-16

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4547906A (en) * 1983-06-27 1985-10-22 Kanebo, Ltd. Heat retaining article
DE3605677A1 (en) 1985-02-22 1986-08-28 Kanebo Textile, Ltd., Osaka WARM-HOLDING CLOTHING
JP2015002267A (en) * 2013-06-14 2015-01-05 日亜化学工業株式会社 Field effect transistor

Also Published As

Publication number Publication date
JPS6217389B2 (en) 1987-04-17

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