JPS5596672A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5596672A JPS5596672A JP513479A JP513479A JPS5596672A JP S5596672 A JPS5596672 A JP S5596672A JP 513479 A JP513479 A JP 513479A JP 513479 A JP513479 A JP 513479A JP S5596672 A JPS5596672 A JP S5596672A
- Authority
- JP
- Japan
- Prior art keywords
- source
- shapes
- region
- triangular
- drain regions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Abstract
PURPOSE:To flow large current through small area in a semiconductor device by collecting a number of triangular flat shapes each formed with a plurality of source and drain regions in one conductivity region when forming the source and drain regions. CONSTITUTION:A number of reverse conductivity source and drain regions are diffused on one conductivity semiconductor substrate to thereby form a MOS transistor or the like. At this time the fundamental configuration of the source region 1 and the drain region are formed in triangular shape, and adjacently contacted each other through a gate region 3. A number of such triangular shapes are arranged regularly. When the same occupying area is formed at the triangular shapes thus formed, their channel width can be lengthened, and drain current may also be increased through the shapes to thereby increase the output of the transistor.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP513479A JPS5596672A (en) | 1979-01-19 | 1979-01-19 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP513479A JPS5596672A (en) | 1979-01-19 | 1979-01-19 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5596672A true JPS5596672A (en) | 1980-07-23 |
Family
ID=11602831
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP513479A Pending JPS5596672A (en) | 1979-01-19 | 1979-01-19 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5596672A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59135651U (en) * | 1983-03-02 | 1984-09-10 | 三洋電機株式会社 | transistor |
JPS59135652U (en) * | 1983-03-02 | 1984-09-10 | 三洋電機株式会社 | transistor |
JPS6012742A (en) * | 1983-07-01 | 1985-01-23 | Toshiba Corp | Semiconductor device |
US4639762A (en) * | 1984-04-30 | 1987-01-27 | Rca Corporation | MOSFET with reduced bipolar effects |
US5040035A (en) * | 1989-12-22 | 1991-08-13 | At&T Bell Laboratories | MOS devices having improved threshold match |
-
1979
- 1979-01-19 JP JP513479A patent/JPS5596672A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59135651U (en) * | 1983-03-02 | 1984-09-10 | 三洋電機株式会社 | transistor |
JPS59135652U (en) * | 1983-03-02 | 1984-09-10 | 三洋電機株式会社 | transistor |
JPH0438520Y2 (en) * | 1983-03-02 | 1992-09-09 | ||
JPH0438519Y2 (en) * | 1983-03-02 | 1992-09-09 | ||
JPS6012742A (en) * | 1983-07-01 | 1985-01-23 | Toshiba Corp | Semiconductor device |
US4639762A (en) * | 1984-04-30 | 1987-01-27 | Rca Corporation | MOSFET with reduced bipolar effects |
US5040035A (en) * | 1989-12-22 | 1991-08-13 | At&T Bell Laboratories | MOS devices having improved threshold match |
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