JPS5596672A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5596672A
JPS5596672A JP513479A JP513479A JPS5596672A JP S5596672 A JPS5596672 A JP S5596672A JP 513479 A JP513479 A JP 513479A JP 513479 A JP513479 A JP 513479A JP S5596672 A JPS5596672 A JP S5596672A
Authority
JP
Japan
Prior art keywords
source
shapes
region
triangular
drain regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP513479A
Other languages
Japanese (ja)
Inventor
Kimimaro Yoshikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP513479A priority Critical patent/JPS5596672A/en
Publication of JPS5596672A publication Critical patent/JPS5596672A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

PURPOSE:To flow large current through small area in a semiconductor device by collecting a number of triangular flat shapes each formed with a plurality of source and drain regions in one conductivity region when forming the source and drain regions. CONSTITUTION:A number of reverse conductivity source and drain regions are diffused on one conductivity semiconductor substrate to thereby form a MOS transistor or the like. At this time the fundamental configuration of the source region 1 and the drain region are formed in triangular shape, and adjacently contacted each other through a gate region 3. A number of such triangular shapes are arranged regularly. When the same occupying area is formed at the triangular shapes thus formed, their channel width can be lengthened, and drain current may also be increased through the shapes to thereby increase the output of the transistor.
JP513479A 1979-01-19 1979-01-19 Semiconductor device Pending JPS5596672A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP513479A JPS5596672A (en) 1979-01-19 1979-01-19 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP513479A JPS5596672A (en) 1979-01-19 1979-01-19 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5596672A true JPS5596672A (en) 1980-07-23

Family

ID=11602831

Family Applications (1)

Application Number Title Priority Date Filing Date
JP513479A Pending JPS5596672A (en) 1979-01-19 1979-01-19 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5596672A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59135651U (en) * 1983-03-02 1984-09-10 三洋電機株式会社 transistor
JPS59135652U (en) * 1983-03-02 1984-09-10 三洋電機株式会社 transistor
JPS6012742A (en) * 1983-07-01 1985-01-23 Toshiba Corp Semiconductor device
US4639762A (en) * 1984-04-30 1987-01-27 Rca Corporation MOSFET with reduced bipolar effects
US5040035A (en) * 1989-12-22 1991-08-13 At&T Bell Laboratories MOS devices having improved threshold match

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59135651U (en) * 1983-03-02 1984-09-10 三洋電機株式会社 transistor
JPS59135652U (en) * 1983-03-02 1984-09-10 三洋電機株式会社 transistor
JPH0438520Y2 (en) * 1983-03-02 1992-09-09
JPH0438519Y2 (en) * 1983-03-02 1992-09-09
JPS6012742A (en) * 1983-07-01 1985-01-23 Toshiba Corp Semiconductor device
US4639762A (en) * 1984-04-30 1987-01-27 Rca Corporation MOSFET with reduced bipolar effects
US5040035A (en) * 1989-12-22 1991-08-13 At&T Bell Laboratories MOS devices having improved threshold match

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