JPS5727073A - Normally off tipe schottky gate filed-effect transistor - Google Patents

Normally off tipe schottky gate filed-effect transistor

Info

Publication number
JPS5727073A
JPS5727073A JP10206980A JP10206980A JPS5727073A JP S5727073 A JPS5727073 A JP S5727073A JP 10206980 A JP10206980 A JP 10206980A JP 10206980 A JP10206980 A JP 10206980A JP S5727073 A JPS5727073 A JP S5727073A
Authority
JP
Japan
Prior art keywords
electrode
tipe
normally
effect transistor
schottky gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10206980A
Other languages
Japanese (ja)
Inventor
Kazunori Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP10206980A priority Critical patent/JPS5727073A/en
Publication of JPS5727073A publication Critical patent/JPS5727073A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Abstract

PURPOSE:To increase a transfer speed by constituting a gate electrode by a plurality of electrode parts. CONSTITUTION:An N type epitaxial layer 2 is formed on a semi-insulating semiconductor substrate 1, a source electrode 3 and a drain electrode 4 are attached to both ends of said epitaxial growth layer 2 so as to form ohmic contact, and the gate electrode 5 is further provided. Said gate electrode 5 is constituted by a plurality of electrode parts 21, which are sequentially arranged along a wire 7 with an interval L being provided, and which form Schottky junction 20. The plurality of the electrode parts 21 are connected by a linking means such as a wire 22 one another.
JP10206980A 1980-07-25 1980-07-25 Normally off tipe schottky gate filed-effect transistor Pending JPS5727073A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10206980A JPS5727073A (en) 1980-07-25 1980-07-25 Normally off tipe schottky gate filed-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10206980A JPS5727073A (en) 1980-07-25 1980-07-25 Normally off tipe schottky gate filed-effect transistor

Publications (1)

Publication Number Publication Date
JPS5727073A true JPS5727073A (en) 1982-02-13

Family

ID=14317469

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10206980A Pending JPS5727073A (en) 1980-07-25 1980-07-25 Normally off tipe schottky gate filed-effect transistor

Country Status (1)

Country Link
JP (1) JPS5727073A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS622666A (en) * 1985-06-28 1987-01-08 Matsushita Electric Ind Co Ltd Field effect transistor
JPS62248261A (en) * 1986-04-21 1987-10-29 Hitachi Ltd Semiconductor device
US5206531A (en) * 1990-03-19 1993-04-27 Lockheed Sanders, Inc. Semiconductor device having a control gate with reduced semiconductor contact

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS622666A (en) * 1985-06-28 1987-01-08 Matsushita Electric Ind Co Ltd Field effect transistor
JPS62248261A (en) * 1986-04-21 1987-10-29 Hitachi Ltd Semiconductor device
US5206531A (en) * 1990-03-19 1993-04-27 Lockheed Sanders, Inc. Semiconductor device having a control gate with reduced semiconductor contact

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