JPS5339889A - Semiconductor device and its production - Google Patents

Semiconductor device and its production

Info

Publication number
JPS5339889A
JPS5339889A JP11369676A JP11369676A JPS5339889A JP S5339889 A JPS5339889 A JP S5339889A JP 11369676 A JP11369676 A JP 11369676A JP 11369676 A JP11369676 A JP 11369676A JP S5339889 A JPS5339889 A JP S5339889A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
small power
injection
normality
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11369676A
Other languages
Japanese (ja)
Inventor
Akio Hayasaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11369676A priority Critical patent/JPS5339889A/en
Publication of JPS5339889A publication Critical patent/JPS5339889A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To prevent the injection of ineffective carriers, increase the current gain of a lateral PNP transistor and obtain an I<2>L of small power consumption, high operating speed and small power-delay product by forming an insulation layer on the bottom surface other than the PN junction lateral surface part where carrier injection is accomplished in normality.
JP11369676A 1976-09-24 1976-09-24 Semiconductor device and its production Pending JPS5339889A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11369676A JPS5339889A (en) 1976-09-24 1976-09-24 Semiconductor device and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11369676A JPS5339889A (en) 1976-09-24 1976-09-24 Semiconductor device and its production

Publications (1)

Publication Number Publication Date
JPS5339889A true JPS5339889A (en) 1978-04-12

Family

ID=14618851

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11369676A Pending JPS5339889A (en) 1976-09-24 1976-09-24 Semiconductor device and its production

Country Status (1)

Country Link
JP (1) JPS5339889A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6097670A (en) * 1983-11-02 1985-05-31 Hitachi Ltd Semiconductor device
JPS6224670A (en) * 1985-01-30 1987-02-02 テキサス　インスツルメンツ　インコ−ポレイテツド Bipolar transistor and making thereof
US9108308B2 (en) 2011-11-14 2015-08-18 Panasonic Intellectual Property Management Co., Ltd. Switch operation device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6097670A (en) * 1983-11-02 1985-05-31 Hitachi Ltd Semiconductor device
JPS6224670A (en) * 1985-01-30 1987-02-02 テキサス　インスツルメンツ　インコ−ポレイテツド Bipolar transistor and making thereof
US9108308B2 (en) 2011-11-14 2015-08-18 Panasonic Intellectual Property Management Co., Ltd. Switch operation device

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