JPS5735366A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS5735366A
JPS5735366A JP9090780A JP9090780A JPS5735366A JP S5735366 A JPS5735366 A JP S5735366A JP 9090780 A JP9090780 A JP 9090780A JP 9090780 A JP9090780 A JP 9090780A JP S5735366 A JPS5735366 A JP S5735366A
Authority
JP
Japan
Prior art keywords
region
transistor
type
base
epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9090780A
Other languages
Japanese (ja)
Inventor
Kimimaro Yoshikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9090780A priority Critical patent/JPS5735366A/en
Publication of JPS5735366A publication Critical patent/JPS5735366A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]

Abstract

PURPOSE:To increase current amplification factor of a reverse direction transistor by removing a base region of a lateral direction transistor as a minority carrier injection element, and forming a longitudinal direction transistor provided in a high concentration diffused region in an epitaxial region. CONSTITUTION:A high concentration, N type, diffused region 13 is formed in an N type epitaxial region 11 in an emitter region of the reverse direction switchg transistor. In the meantime, a base region is formed by a low concentration epitaxial region 11 in the lateral direction PNP transistor as the carrier injection element. In a bipolar NPN transistor formed by a base region 5 and an emitter region 6, a P type base is formed in the low concentration, N type, epitaxial region 11.
JP9090780A 1980-07-03 1980-07-03 Semiconductor integrated circuit device Pending JPS5735366A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9090780A JPS5735366A (en) 1980-07-03 1980-07-03 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9090780A JPS5735366A (en) 1980-07-03 1980-07-03 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS5735366A true JPS5735366A (en) 1982-02-25

Family

ID=14011468

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9090780A Pending JPS5735366A (en) 1980-07-03 1980-07-03 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5735366A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59205510A (en) * 1983-04-22 1984-11-21 コンバツシヨン・エンヂニアリング・インコ−ポレ−テツド Nozzle chip for burner
JPS6043807U (en) * 1983-09-05 1985-03-28 バブコツク日立株式会社 Pulverized coal combustion equipment

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59205510A (en) * 1983-04-22 1984-11-21 コンバツシヨン・エンヂニアリング・インコ−ポレ−テツド Nozzle chip for burner
JPH0225086B2 (en) * 1983-04-22 1990-05-31 Combustion Eng
JPS6043807U (en) * 1983-09-05 1985-03-28 バブコツク日立株式会社 Pulverized coal combustion equipment
JPH0318808Y2 (en) * 1983-09-05 1991-04-22

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