JPS5715456A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS5715456A
JPS5715456A JP9197780A JP9197780A JPS5715456A JP S5715456 A JPS5715456 A JP S5715456A JP 9197780 A JP9197780 A JP 9197780A JP 9197780 A JP9197780 A JP 9197780A JP S5715456 A JPS5715456 A JP S5715456A
Authority
JP
Japan
Prior art keywords
emitter
circuit
noise
area
semiconductor integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9197780A
Other languages
Japanese (ja)
Inventor
Takashi Idogami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9197780A priority Critical patent/JPS5715456A/en
Publication of JPS5715456A publication Critical patent/JPS5715456A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To reduce the noise and to increase the withstand voltage of a semiconductor integrated circuit device by dividing the emitter of an element having a large emitter area in the same shape as the emitter of an element having a small emitter area to match the hFE and VCBO of a plurality of transistors formed in the circuit. CONSTITUTION:In a circuit for the purpose of reducing a noise, the pattern of a transistor TR(B) used at the rear stage amplifier is so formed that the emitter of the transistor is increased larger than that of the initial TR(A) to increase the collector current. In the method of increasing the area. The shape of the emitter diffused region formed on the base region 12 of the TR(B) is divided into a plurality of emitter units 13a of the same shape as the emitter region 1 of the TR(A). Since the influence of the size of the pattern can be prevented in this manner, the hFE and VBCD of the TR(A) and TR(B) can be matched, and the noise of the circuit can be reduced and the withstand voltage of the circuit can be enhanced.
JP9197780A 1980-07-02 1980-07-02 Semiconductor integrated circuit device Pending JPS5715456A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9197780A JPS5715456A (en) 1980-07-02 1980-07-02 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9197780A JPS5715456A (en) 1980-07-02 1980-07-02 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS5715456A true JPS5715456A (en) 1982-01-26

Family

ID=14041560

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9197780A Pending JPS5715456A (en) 1980-07-02 1980-07-02 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5715456A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5723897A (en) * 1995-06-07 1998-03-03 Vtc Inc. Segmented emitter low noise transistor
US7226835B2 (en) * 2001-12-28 2007-06-05 Texas Instruments Incorporated Versatile system for optimizing current gain in bipolar transistor structures

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5561059A (en) * 1978-10-31 1980-05-08 Nec Corp Semiconductor ic device
JPS56134764A (en) * 1980-03-26 1981-10-21 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacturing of bipolar integrated circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5561059A (en) * 1978-10-31 1980-05-08 Nec Corp Semiconductor ic device
JPS56134764A (en) * 1980-03-26 1981-10-21 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacturing of bipolar integrated circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5723897A (en) * 1995-06-07 1998-03-03 Vtc Inc. Segmented emitter low noise transistor
US7226835B2 (en) * 2001-12-28 2007-06-05 Texas Instruments Incorporated Versatile system for optimizing current gain in bipolar transistor structures
US7615805B2 (en) 2001-12-28 2009-11-10 Texas Instruments Incorporated Versatile system for optimizing current gain in bipolar transistor structures

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