JPS5261976A - Semiconductor integrated circuit device and its production - Google Patents
Semiconductor integrated circuit device and its productionInfo
- Publication number
- JPS5261976A JPS5261976A JP50139048A JP13904875A JPS5261976A JP S5261976 A JPS5261976 A JP S5261976A JP 50139048 A JP50139048 A JP 50139048A JP 13904875 A JP13904875 A JP 13904875A JP S5261976 A JPS5261976 A JP S5261976A
- Authority
- JP
- Japan
- Prior art keywords
- production
- integrated circuit
- semiconductor integrated
- circuit device
- buried layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
- H01L27/0244—I2L structures integrated in combination with analog structures
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To increase electron injection efficiency and increase the hFE of an I<2>L by reducing the distance between the buried layer of the I<2>L and the base layer of the vertical transistor on the I<2>L through the use of the raise of a buried layer forming impurity, in an IC circuit including the I<2>L and bipolar transistor.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50139048A JPS5261976A (en) | 1975-11-18 | 1975-11-18 | Semiconductor integrated circuit device and its production |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50139048A JPS5261976A (en) | 1975-11-18 | 1975-11-18 | Semiconductor integrated circuit device and its production |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5261976A true JPS5261976A (en) | 1977-05-21 |
Family
ID=15236240
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50139048A Pending JPS5261976A (en) | 1975-11-18 | 1975-11-18 | Semiconductor integrated circuit device and its production |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5261976A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS533781A (en) * | 1976-06-30 | 1978-01-13 | Mitsubishi Electric Corp | Semiconductor integrated circuit |
JPS5388586A (en) * | 1977-01-12 | 1978-08-04 | Rca Corp | Semiconductor ic |
JPS5585052A (en) * | 1978-02-15 | 1980-06-26 | Rca Corp | Semiconductor integrated circuit and method of fabricating same |
US4680768A (en) * | 1984-07-19 | 1987-07-14 | Sanyo Electric Co., Ltd. | Semiconductor laser with a quantum well layer including a disordered region |
-
1975
- 1975-11-18 JP JP50139048A patent/JPS5261976A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS533781A (en) * | 1976-06-30 | 1978-01-13 | Mitsubishi Electric Corp | Semiconductor integrated circuit |
JPS5388586A (en) * | 1977-01-12 | 1978-08-04 | Rca Corp | Semiconductor ic |
JPS5585052A (en) * | 1978-02-15 | 1980-06-26 | Rca Corp | Semiconductor integrated circuit and method of fabricating same |
US4680768A (en) * | 1984-07-19 | 1987-07-14 | Sanyo Electric Co., Ltd. | Semiconductor laser with a quantum well layer including a disordered region |
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