JPS5366187A - Semiconductor ingegrated circuit device and its production - Google Patents

Semiconductor ingegrated circuit device and its production

Info

Publication number
JPS5366187A
JPS5366187A JP14127576A JP14127576A JPS5366187A JP S5366187 A JPS5366187 A JP S5366187A JP 14127576 A JP14127576 A JP 14127576A JP 14127576 A JP14127576 A JP 14127576A JP S5366187 A JPS5366187 A JP S5366187A
Authority
JP
Japan
Prior art keywords
ingegrated
semiconductor
production
circuit device
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14127576A
Other languages
Japanese (ja)
Inventor
Seiichi Jo
Kazuo Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14127576A priority Critical patent/JPS5366187A/en
Publication of JPS5366187A publication Critical patent/JPS5366187A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H01L27/0244—I2L structures integrated in combination with analog structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To increase the current amplification factors of the transistors of an I<2>L without increasing the number of steps in an IC of ordinary bipolar transistors and resistance elements and an I<2>L.
JP14127576A 1976-11-26 1976-11-26 Semiconductor ingegrated circuit device and its production Pending JPS5366187A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14127576A JPS5366187A (en) 1976-11-26 1976-11-26 Semiconductor ingegrated circuit device and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14127576A JPS5366187A (en) 1976-11-26 1976-11-26 Semiconductor ingegrated circuit device and its production

Publications (1)

Publication Number Publication Date
JPS5366187A true JPS5366187A (en) 1978-06-13

Family

ID=15288092

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14127576A Pending JPS5366187A (en) 1976-11-26 1976-11-26 Semiconductor ingegrated circuit device and its production

Country Status (1)

Country Link
JP (1) JPS5366187A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5066602A (en) * 1982-04-19 1991-11-19 Matsushita Electric Industrial Co., Ltd. Method of making semiconductor ic including polar transistors

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5066602A (en) * 1982-04-19 1991-11-19 Matsushita Electric Industrial Co., Ltd. Method of making semiconductor ic including polar transistors

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