JPS533079A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS533079A
JPS533079A JP7637976A JP7637976A JPS533079A JP S533079 A JPS533079 A JP S533079A JP 7637976 A JP7637976 A JP 7637976A JP 7637976 A JP7637976 A JP 7637976A JP S533079 A JPS533079 A JP S533079A
Authority
JP
Japan
Prior art keywords
integrated circuit
semiconductor integrated
circuit device
substrate
aer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7637976A
Other languages
Japanese (ja)
Inventor
Takahiro Okabe
Kenji Kaneko
Tomoyuki Watabe
Yutaka Okada
Toshiro Tsukada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7637976A priority Critical patent/JPS533079A/en
Publication of JPS533079A publication Critical patent/JPS533079A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]

Abstract

PURPOSE:Switching characteristics of a reverse NPN transistor forming an I<2>L aer improved by partially burying an insulator in a substrate and selectively opening holes in the substrate to electrically conduct it.
JP7637976A 1976-06-30 1976-06-30 Semiconductor integrated circuit device Pending JPS533079A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7637976A JPS533079A (en) 1976-06-30 1976-06-30 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7637976A JPS533079A (en) 1976-06-30 1976-06-30 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS533079A true JPS533079A (en) 1978-01-12

Family

ID=13603695

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7637976A Pending JPS533079A (en) 1976-06-30 1976-06-30 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS533079A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55148478A (en) * 1979-05-09 1980-11-19 Matsushita Electric Ind Co Ltd Supersonic probe

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55148478A (en) * 1979-05-09 1980-11-19 Matsushita Electric Ind Co Ltd Supersonic probe
JPS5853518B2 (en) * 1979-05-09 1983-11-29 松下電器産業株式会社 ultrasonic probe

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