JPS52138882A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- JPS52138882A JPS52138882A JP5556376A JP5556376A JPS52138882A JP S52138882 A JPS52138882 A JP S52138882A JP 5556376 A JP5556376 A JP 5556376A JP 5556376 A JP5556376 A JP 5556376A JP S52138882 A JPS52138882 A JP S52138882A
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- semiconductor integrated
- circuit device
- lacked
- lowering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 230000003321 amplification Effects 0.000 abstract 1
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
- H01L27/0237—Integrated injection logic structures [I2L] using vertical injector structures
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To obtain an I<2>L of low power consumption at a high speed without lowering the current amplification factor of an NPN transistor by forming a P type buried region to such a shape in which it is lacked directly under N type diffused regions.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5556376A JPS52138882A (en) | 1976-05-14 | 1976-05-14 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5556376A JPS52138882A (en) | 1976-05-14 | 1976-05-14 | Semiconductor integrated circuit device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS52138882A true JPS52138882A (en) | 1977-11-19 |
Family
ID=13002161
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5556376A Pending JPS52138882A (en) | 1976-05-14 | 1976-05-14 | Semiconductor integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52138882A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5129880A (en) * | 1974-09-06 | 1976-03-13 | Hitachi Ltd |
-
1976
- 1976-05-14 JP JP5556376A patent/JPS52138882A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5129880A (en) * | 1974-09-06 | 1976-03-13 | Hitachi Ltd |
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