JPS52130576A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS52130576A
JPS52130576A JP4899376A JP4899376A JPS52130576A JP S52130576 A JPS52130576 A JP S52130576A JP 4899376 A JP4899376 A JP 4899376A JP 4899376 A JP4899376 A JP 4899376A JP S52130576 A JPS52130576 A JP S52130576A
Authority
JP
Japan
Prior art keywords
integrated circuit
semiconductor integrated
circuit device
regions
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4899376A
Other languages
Japanese (ja)
Other versions
JPS5513586B2 (en
Inventor
Takao Nakano
Osamu Tomizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP4899376A priority Critical patent/JPS52130576A/en
Publication of JPS52130576A publication Critical patent/JPS52130576A/en
Publication of JPS5513586B2 publication Critical patent/JPS5513586B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To prevent the carrier storage to an emitter region without decreasing current amplification factor by providing buried regions of an opposite conductivity under the emitter regions other than the regions directly under the collector of vertical transistors.
JP4899376A 1976-04-27 1976-04-27 Semiconductor integrated circuit device Granted JPS52130576A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4899376A JPS52130576A (en) 1976-04-27 1976-04-27 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4899376A JPS52130576A (en) 1976-04-27 1976-04-27 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS52130576A true JPS52130576A (en) 1977-11-01
JPS5513586B2 JPS5513586B2 (en) 1980-04-10

Family

ID=12818729

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4899376A Granted JPS52130576A (en) 1976-04-27 1976-04-27 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS52130576A (en)

Also Published As

Publication number Publication date
JPS5513586B2 (en) 1980-04-10

Similar Documents

Publication Publication Date Title
JPS539469A (en) Semiconductor device having electrode of stepped structure and its production
GB1504032A (en) Muting circuits
JPS52135685A (en) Semiconductor device
JPS52154383A (en) Semiconductor integrated circuit device
JPS5360582A (en) Semiconductor ingegrated circuit device
JPS52130576A (en) Semiconductor integrated circuit device
JPS5261977A (en) Semiconductor integrated circuit device and its production
JPS5261974A (en) Semiconductor integrated circuit device
JPS5338990A (en) Iil semiconductor device
JPS5261978A (en) Semiconductor integrated circuit device and its production
JPS51139283A (en) Semi-conductor device
JPS5261976A (en) Semiconductor integrated circuit device and its production
JPS538570A (en) Semiconductor device
JPS5265679A (en) Semiconductor device
JPS5297683A (en) Semiconductor circuit device
JPS52133761A (en) Integrated circuit
GB1284015A (en) Improvements in or relating to transistors
JPS5275281A (en) Semiconductor device
JPS5286047A (en) Transistor voltage amplifier circuit
JPS535584A (en) Semiconductor ic unit
JPS5339092A (en) Semiconductor integrated circuit device
JPS52138882A (en) Semiconductor integrated circuit device
JPS51123071A (en) Fabrication technique of semiconductor device
JPS538070A (en) Semiconductor device
JPS5438779A (en) Semiconductor integrated circuit device