GB1284015A - Improvements in or relating to transistors - Google Patents

Improvements in or relating to transistors

Info

Publication number
GB1284015A
GB1284015A GB2588970A GB2588970A GB1284015A GB 1284015 A GB1284015 A GB 1284015A GB 2588970 A GB2588970 A GB 2588970A GB 2588970 A GB2588970 A GB 2588970A GB 1284015 A GB1284015 A GB 1284015A
Authority
GB
United Kingdom
Prior art keywords
region
type
collector
transistor
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2588970A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1284015A publication Critical patent/GB1284015A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0821—Combination of lateral and vertical transistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

1284015 Semi-conductor devices SIEMENS AG 29 May 1970 [30 May 1969] 25889/70 Heading HiK A transistor in which the emitter-to-collector current through the base region flows along both lateral and vertical paths comprises two laterally spaced P-type regions in an N-type base region, one of the two P-type regions constituting part of the collector region and being in direct electrical contact with the surrounding P-type substrate S which constitutes the remainder of the collector region, while the other P-type region constitutes the emitter region. The transistor may be isolated from a semi-conductor body S<SP>1</SP> containing other transistors by a layer I s of SiO s . In a modification the lateral region constituting part of the collector region contacts a P-type isolation wall (Tr), Fig. 3 (not shown), which in turn contacts the P-type substrate S.
GB2588970A 1969-05-30 1970-05-29 Improvements in or relating to transistors Expired GB1284015A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691927585 DE1927585C3 (en) 1969-05-30 1969-05-30 Transistor with lateral emitter zone and equally doped lateral collector zone

Publications (1)

Publication Number Publication Date
GB1284015A true GB1284015A (en) 1972-08-02

Family

ID=5735640

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2588970A Expired GB1284015A (en) 1969-05-30 1970-05-29 Improvements in or relating to transistors

Country Status (8)

Country Link
JP (1) JPS4813871B1 (en)
AT (1) AT318711B (en)
CH (1) CH504785A (en)
DE (1) DE1927585C3 (en)
FR (1) FR2043813B1 (en)
GB (1) GB1284015A (en)
NL (1) NL7007290A (en)
SE (1) SE357641B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2516396C3 (en) * 1975-04-15 1981-11-19 Philips Patentverwaltung Gmbh, 2000 Hamburg Semiconductor component with a diode
FR2341232A1 (en) * 1976-02-13 1977-09-09 Thomson Csf BISTABLE LOGIC ELEMENT
JPS52108564A (en) * 1976-03-09 1977-09-12 Agency Of Ind Science & Technol Rotary sifter

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3411051A (en) * 1964-12-29 1968-11-12 Texas Instruments Inc Transistor with an isolated region having a p-n junction extending from the isolation wall to a surface

Also Published As

Publication number Publication date
AT318711B (en) 1974-11-11
CH504785A (en) 1971-03-15
DE1927585A1 (en) 1971-02-04
DE1927585C3 (en) 1978-10-12
SE357641B (en) 1973-07-02
FR2043813B1 (en) 1975-01-10
FR2043813A1 (en) 1971-02-19
JPS4813871B1 (en) 1973-05-01
NL7007290A (en) 1970-12-02
DE1927585B2 (en) 1971-07-01

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees