SE357641B - - Google Patents

Info

Publication number
SE357641B
SE357641B SE758570A SE758570A SE357641B SE 357641 B SE357641 B SE 357641B SE 758570 A SE758570 A SE 758570A SE 758570 A SE758570 A SE 758570A SE 357641 B SE357641 B SE 357641B
Authority
SE
Sweden
Application number
SE758570A
Inventor
W Hoehne
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of SE357641B publication Critical patent/SE357641B/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0821Combination of lateral and vertical transistors only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
SE758570A 1969-05-30 1970-06-01 SE357641B (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691927585 DE1927585C3 (de) 1969-05-30 1969-05-30 Transistor mit lateraler Emitterzone und gleichdotierter lateraler Kollektorzone

Publications (1)

Publication Number Publication Date
SE357641B true SE357641B (xx) 1973-07-02

Family

ID=5735640

Family Applications (1)

Application Number Title Priority Date Filing Date
SE758570A SE357641B (xx) 1969-05-30 1970-06-01

Country Status (8)

Country Link
JP (1) JPS4813871B1 (xx)
AT (1) AT318711B (xx)
CH (1) CH504785A (xx)
DE (1) DE1927585C3 (xx)
FR (1) FR2043813B1 (xx)
GB (1) GB1284015A (xx)
NL (1) NL7007290A (xx)
SE (1) SE357641B (xx)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2516396C3 (de) * 1975-04-15 1981-11-19 Philips Patentverwaltung Gmbh, 2000 Hamburg Halbleiterbauelement mit einer Diode
FR2341232A1 (fr) * 1976-02-13 1977-09-09 Thomson Csf Element logique bistable
JPS52108564A (en) * 1976-03-09 1977-09-12 Agency Of Ind Science & Technol Rotary sifter

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3411051A (en) * 1964-12-29 1968-11-12 Texas Instruments Inc Transistor with an isolated region having a p-n junction extending from the isolation wall to a surface

Also Published As

Publication number Publication date
AT318711B (de) 1974-11-11
CH504785A (de) 1971-03-15
DE1927585A1 (de) 1971-02-04
GB1284015A (en) 1972-08-02
DE1927585C3 (de) 1978-10-12
FR2043813B1 (xx) 1975-01-10
FR2043813A1 (xx) 1971-02-19
JPS4813871B1 (xx) 1973-05-01
NL7007290A (xx) 1970-12-02
DE1927585B2 (de) 1971-07-01

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