CH504785A - Transistor mit lateraler Emitterzone und lateraler Kollektorzone - Google Patents

Transistor mit lateraler Emitterzone und lateraler Kollektorzone

Info

Publication number
CH504785A
CH504785A CH785370A CH785370A CH504785A CH 504785 A CH504785 A CH 504785A CH 785370 A CH785370 A CH 785370A CH 785370 A CH785370 A CH 785370A CH 504785 A CH504785 A CH 504785A
Authority
CH
Switzerland
Prior art keywords
lateral
zone
transistor
collector
emitter
Prior art date
Application number
CH785370A
Other languages
German (de)
English (en)
Inventor
Hoehne Werner Ing Dipl
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH504785A publication Critical patent/CH504785A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0821—Combination of lateral and vertical transistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
CH785370A 1969-05-30 1970-05-27 Transistor mit lateraler Emitterzone und lateraler Kollektorzone CH504785A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691927585 DE1927585C3 (de) 1969-05-30 1969-05-30 Transistor mit lateraler Emitterzone und gleichdotierter lateraler Kollektorzone

Publications (1)

Publication Number Publication Date
CH504785A true CH504785A (de) 1971-03-15

Family

ID=5735640

Family Applications (1)

Application Number Title Priority Date Filing Date
CH785370A CH504785A (de) 1969-05-30 1970-05-27 Transistor mit lateraler Emitterzone und lateraler Kollektorzone

Country Status (8)

Country Link
JP (1) JPS4813871B1 (xx)
AT (1) AT318711B (xx)
CH (1) CH504785A (xx)
DE (1) DE1927585C3 (xx)
FR (1) FR2043813B1 (xx)
GB (1) GB1284015A (xx)
NL (1) NL7007290A (xx)
SE (1) SE357641B (xx)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2516396C3 (de) * 1975-04-15 1981-11-19 Philips Patentverwaltung Gmbh, 2000 Hamburg Halbleiterbauelement mit einer Diode
FR2341232A1 (fr) * 1976-02-13 1977-09-09 Thomson Csf Element logique bistable
JPS52108564A (en) * 1976-03-09 1977-09-12 Agency Of Ind Science & Technol Rotary sifter

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3411051A (en) * 1964-12-29 1968-11-12 Texas Instruments Inc Transistor with an isolated region having a p-n junction extending from the isolation wall to a surface

Also Published As

Publication number Publication date
SE357641B (xx) 1973-07-02
AT318711B (de) 1974-11-11
DE1927585B2 (de) 1971-07-01
NL7007290A (xx) 1970-12-02
GB1284015A (en) 1972-08-02
FR2043813A1 (xx) 1971-02-19
JPS4813871B1 (xx) 1973-05-01
DE1927585C3 (de) 1978-10-12
FR2043813B1 (xx) 1975-01-10
DE1927585A1 (de) 1971-02-04

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Legal Events

Date Code Title Description
PL Patent ceased