AT320028B - Transistor mit rasternetzartiger Emitterzone - Google Patents

Transistor mit rasternetzartiger Emitterzone

Info

Publication number
AT320028B
AT320028B AT911669A AT911669A AT320028B AT 320028 B AT320028 B AT 320028B AT 911669 A AT911669 A AT 911669A AT 911669 A AT911669 A AT 911669A AT 320028 B AT320028 B AT 320028B
Authority
AT
Austria
Prior art keywords
grid
transistor
emitter zone
emitter
zone
Prior art date
Application number
AT911669A
Other languages
English (en)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of AT320028B publication Critical patent/AT320028B/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
AT911669A 1968-09-30 1969-09-26 Transistor mit rasternetzartiger Emitterzone AT320028B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6813997A NL6813997A (de) 1968-09-30 1968-09-30

Publications (1)

Publication Number Publication Date
AT320028B true AT320028B (de) 1975-01-27

Family

ID=19804803

Family Applications (1)

Application Number Title Priority Date Filing Date
AT911669A AT320028B (de) 1968-09-30 1969-09-26 Transistor mit rasternetzartiger Emitterzone

Country Status (8)

Country Link
US (1) US3576476A (de)
AT (1) AT320028B (de)
BR (1) BR6912784D0 (de)
CH (1) CH497791A (de)
FR (1) FR2019220B1 (de)
GB (1) GB1209740A (de)
NL (1) NL6813997A (de)
SE (1) SE350150B (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0126157A1 (de) * 1982-11-24 1984-11-28 Vascular Tech, Inc. Verfahren und vorrichtung zum disassoziieren von blutgerinsel
US4513306A (en) * 1982-12-27 1985-04-23 Motorola, Inc. Current ratioing device structure
JPH0712045B2 (ja) * 1988-03-02 1995-02-08 株式会社東海理化電機製作所 電流検出素子
US5488252A (en) * 1994-08-16 1996-01-30 Telefonaktiebolaget L M Erricsson Layout for radio frequency power transistors
JPH10303215A (ja) * 1997-04-30 1998-11-13 Nec Corp 半導体装置
US20190181251A1 (en) * 2017-12-07 2019-06-13 Qualcomm Incorporated Mesh structure for heterojunction bipolar transistors for rf applications

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL296170A (de) * 1962-10-04
US3225261A (en) * 1963-11-19 1965-12-21 Fairchild Camera Instr Co High frequency power transistor
DE1281036B (de) * 1965-07-31 1968-10-24 Telefunken Patent Transistor und Verfahren zu seiner Herstellung
US3462658A (en) * 1965-10-12 1969-08-19 Bendix Corp Multi-emitter semiconductor device
US3444443A (en) * 1966-12-26 1969-05-13 Hitachi Ltd Semiconductor device for high frequency and high power use

Also Published As

Publication number Publication date
BR6912784D0 (pt) 1973-01-11
FR2019220B1 (de) 1974-02-22
DE1803779A1 (de) 1970-06-04
CH497791A (de) 1970-10-15
NL6813997A (de) 1970-04-01
FR2019220A1 (de) 1970-06-26
GB1209740A (en) 1970-10-21
DE1803779B2 (de) 1976-07-15
SE350150B (de) 1972-10-16
US3576476A (en) 1971-04-27

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Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee